Invention Application
- Patent Title: Method and system for measuring film stress in a wafer film
- Patent Title (中): 用于测量晶片薄膜中薄膜应力的方法和系统
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Application No.: US12315933Application Date: 2008-12-08
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Publication No.: US20100141292A1Publication Date: 2010-06-10
- Inventor: Peter J. Hopper
- Applicant: Peter J. Hopper
- Assignee: National Semiconductor
- Current Assignee: National Semiconductor
- Main IPC: G01R31/26
- IPC: G01R31/26 ; H01F5/00
Abstract:
In a MEMS wafer, film stresses are measured by placing an inductor array over or under the wafer and measuring inductance variations across the array to obtain a map defining the amount of bowing of the wafer.
Public/Granted literature
- US08004303B2 Method and system for measuring film stress in a wafer film Public/Granted day:2011-08-23
Information query
