发明申请
- 专利标题： Non-Volatile State Retention Latch
- 专利标题（中）： 非易失性状态保持闭锁
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申请号： US12328042申请日： 2008-12-04
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公开(公告)号： US20100141322A1公开(公告)日： 2010-06-10
- 发明人: Lew G. Chua-Eoan
- 申请人： Lew G. Chua-Eoan
- 申请人地址： US CA San Diego
- 专利权人： QUALCOMM INCORPORATED
- 当前专利权人： QUALCOMM INCORPORATED
- 当前专利权人地址： US CA San Diego
- 主分类号： H03K3/037
- IPC分类号： H03K3/037 ; H03K3/289
摘要：
Electronic circuits use latches including a magnetic tunnel junction (MTJ) structure and logic circuitry arranged to produce a selective state in the MTJ structure. Because the selective state is maintained magnetically, the state of the latch or electronic circuit can be maintained even while power is removed from the electronic device.
公开/授权文献
- US07961502B2 Non-volatile state retention latch 公开/授权日：2011-06-14