发明申请
US20100142256A1 METHOD OF PROGRAMMING A NONVOLATILE MEMORY CELL BY REVERSE BIASING A DIODE STEERING ELEMENT TO SET A STORAGE ELEMENT
有权
通过逆向偏转二极体转向元件来设置存储元件来编程非易失性存储器单元的方法
- 专利标题： METHOD OF PROGRAMMING A NONVOLATILE MEMORY CELL BY REVERSE BIASING A DIODE STEERING ELEMENT TO SET A STORAGE ELEMENT
- 专利标题（中）： 通过逆向偏转二极体转向元件来设置存储元件来编程非易失性存储器单元的方法
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申请号： US12703289申请日： 2010-02-10
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公开(公告)号： US20100142256A1公开(公告)日： 2010-06-10
- 发明人: Tanmay KUMAR , Roy E. Scheuerlein , Pankaj Kalra , Jingyan Zhang
- 申请人： Tanmay KUMAR , Roy E. Scheuerlein , Pankaj Kalra , Jingyan Zhang
- 专利权人： SanDisk 3D LLC
- 当前专利权人： SanDisk 3D LLC
- 主分类号： G11C11/00
- IPC分类号： G11C11/00 ; G11C11/24 ; G11C8/00
摘要：
A method of programming a nonvolatile memory cell. The nonvolatile memory cell includes a diode steering element in series with a carbon storage element The method includes providing a first voltage to the nonvolatile memory cell. The first voltage reverse biases the diode steering element. The carbon storage element sets to a lower resistivity state.
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