Invention Application
- Patent Title: HIGH PRESSURE APPARATUS AND METHOD FOR NITRIDE CRYSTAL GROWTH
- Patent Title (中): 高压装置和氮化物晶体生长方法
-
Application No.: US12334418Application Date: 2008-12-12
-
Publication No.: US20100147210A1Publication Date: 2010-06-17
- Inventor: MARK P. D'EVELYN
- Applicant: MARK P. D'EVELYN
- Applicant Address: US CA Goleta
- Assignee: Soraa, Inc.
- Current Assignee: Soraa, Inc.
- Current Assignee Address: US CA Goleta
- Main IPC: C30B19/08
- IPC: C30B19/08

Abstract:
An improved high pressure apparatus and related methods for processing supercritical fluids. In a specific embodiment, the present apparatus includes a capsule, a release sleeve, a heater, at least one ceramic segment or ring but can be multiple segments or rings, optionally, with one or more scribe marks and/or cracks present. In a specific embodiment, the apparatus optionally has a metal sleeve containing each ceramic ring. The apparatus also has a high-strength enclosure, end flanges with associated insulation, and a power control system. In a specific embodiment, the apparatus is capable of accessing pressures and temperatures of 0.2-2 GPa and 400-1200° C., respectively. Following a run, the release sleeve may be at least partially dissolved or etched to facilitate removal of the capsule from the apparatus.
Information query