Invention Application
US20100147210A1 HIGH PRESSURE APPARATUS AND METHOD FOR NITRIDE CRYSTAL GROWTH 审中-公开
高压装置和氮化物晶体生长方法

  • Patent Title: HIGH PRESSURE APPARATUS AND METHOD FOR NITRIDE CRYSTAL GROWTH
  • Patent Title (中): 高压装置和氮化物晶体生长方法
  • Application No.: US12334418
    Application Date: 2008-12-12
  • Publication No.: US20100147210A1
    Publication Date: 2010-06-17
  • Inventor: MARK P. D'EVELYN
  • Applicant: MARK P. D'EVELYN
  • Applicant Address: US CA Goleta
  • Assignee: Soraa, Inc.
  • Current Assignee: Soraa, Inc.
  • Current Assignee Address: US CA Goleta
  • Main IPC: C30B19/08
  • IPC: C30B19/08
HIGH PRESSURE APPARATUS AND METHOD FOR NITRIDE CRYSTAL GROWTH
Abstract:
An improved high pressure apparatus and related methods for processing supercritical fluids. In a specific embodiment, the present apparatus includes a capsule, a release sleeve, a heater, at least one ceramic segment or ring but can be multiple segments or rings, optionally, with one or more scribe marks and/or cracks present. In a specific embodiment, the apparatus optionally has a metal sleeve containing each ceramic ring. The apparatus also has a high-strength enclosure, end flanges with associated insulation, and a power control system. In a specific embodiment, the apparatus is capable of accessing pressures and temperatures of 0.2-2 GPa and 400-1200° C., respectively. Following a run, the release sleeve may be at least partially dissolved or etched to facilitate removal of the capsule from the apparatus.
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