公开(公告)号：US20100219505A1

公开(公告)日：2010-09-02

申请号：US12546458

申请日：2009-08-24

Applicant: MARK P. D'EVELYN

Inventor： MARK P. D'EVELYN

IPC: H01L29/20 ,  H01L21/20

CPC classification number: C30B29/403 ,  C30B7/105 ,  C30B23/025 ,  C30B25/18 ,  C30B33/06 ,  H01L24/81 ,  H01L2224/0554 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/056 ,  H01L2224/11 ,  H01L2224/81005 ,  H01L2224/81224 ,  H01L2924/00014 ,  H01L2924/14 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

Abstract: A nitride crystal or wafer with a removable surface layer comprises a high quality nitride base crystal, a release layer, and a high quality epitaxial layer. The release layer has a large optical absorption coefficient at wavelengths where the base crystal is substantially transparent and may be etched under conditions where the nitride base crystal and the high quality epitaxial layer are not. The high quality epitaxial layer may be removed from the nitride base crystal by laser liftoff or by chemical etching after deposition of at least one epitaxial device layer. The nitride crystal with a removable surface layer is useful as a substrate for a light emitting diode, a laser diode, a transistor, a photodetector, a solar cell, or for photoelectrochemical water splitting for hydrogen generation.

Abstract translation: 具有可移除表面层的氮化物晶体或晶片包括高质量氮化物基晶，释放层和高质量外延层。 释放层在基底基本上是透明的波长处具有大的光吸收系数，并且可以在不具有氮化物基底和高质量外延层的条件下进行蚀刻。 可以通过激光剥离或通过在沉积至少一个外延器件层之后的化学蚀刻从氮化物基底晶体去除高质量的外延层。 具有可移除表面层的氮化物晶体可用作发光二极管，激光二极管，晶体管，光电检测器，太阳能电池或用于氢发生的光电化学水分解的衬底。

公开(公告)号：US20100003492A1

公开(公告)日：2010-01-07

申请号：US12497969

申请日：2009-07-06

Applicant: MARK P. D'EVELYN

Inventor： MARK P. D'EVELYN

IPC: B32B9/00 ,  C30B23/02 ,  H01B1/02 ,  B28D1/02

CPC classification number: B28D5/00 ,  C30B25/20 ,  C30B29/403 ,  C30B29/406 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/0254

Abstract: A large area nitride crystal, comprising gallium and nitrogen, with a non-polar or semi-polar large-area face, is disclosed, along with a method for making. The crystal is useful as a substrate for a light emitting diode, a laser diode, a transistor, a photodetector, a solar cell, or for photoelectrochemical water splitting for hydrogen generation.

Abstract translation: 公开了一种包括镓和氮的具有非极性或半极性大面积面的大面积氮化物晶体以及制造方法。 该晶体可用作发光二极管，激光二极管，晶体管，光电检测器，太阳能电池或用于氢发生的光电化学水分解的衬底。

公开(公告)号：US20100295088A1

公开(公告)日：2010-11-25

申请号：US12569841

申请日：2009-09-29

Applicant: MARK P. D'EVELYN ,  RAJAT SHARMA ,  ERIC M. HALL ,  DANIEL F. FEEZELL ,  MATHEW C. SCHMIDT

Inventor： MARK P. D'EVELYN ,  RAJAT SHARMA ,  ERIC M. HALL ,  DANIEL F. FEEZELL ,  MATHEW C. SCHMIDT

IPC: H01L33/62

CPC classification number: H01L33/0079 ,  H01L33/18 ,  H01L33/32 ,  H01L33/382 ,  H01L33/405

Abstract: A high efficiency textured-surface light emitting diode comprises a flip-chipped stack of AlxInyGa1-x-yN layers, where 0≦x, y, x+y≦1. Each layer has a high crystalline quality, with a dislocation density below about 105 cm−2. The backside of the stack, exposed by removal of the original substrate, has a textured surface for improved light extraction.

Abstract translation: 高效率纹理表面发光二极管包括Al x In y Ga 1-x-y N层的倒装堆叠，其中0＆nlE; x，y，x + y＆nlE; 1。 每层具有高的结晶质量，位错密度低于约105cm-2。 通过去除原始基底而暴露的堆叠的背面具有纹理表面，用于改进光提取。

公开(公告)号：US20100147210A1

公开(公告)日：2010-06-17

申请号：US12334418

申请日：2008-12-12

Applicant: MARK P. D'EVELYN

Inventor： MARK P. D'EVELYN

IPC: C30B19/08

CPC classification number: C30B7/10 ,  B01J3/008 ,  B01J3/065 ,  B01J2203/0665 ,  B01J2203/067 ,  B01J2203/068 ,  B30B11/005 ,  C30B29/403 ,  C30B29/406 ,  Y02P20/544 ,  Y10T117/1092

Abstract: An improved high pressure apparatus and related methods for processing supercritical fluids. In a specific embodiment, the present apparatus includes a capsule, a release sleeve, a heater, at least one ceramic segment or ring but can be multiple segments or rings, optionally, with one or more scribe marks and/or cracks present. In a specific embodiment, the apparatus optionally has a metal sleeve containing each ceramic ring. The apparatus also has a high-strength enclosure, end flanges with associated insulation, and a power control system. In a specific embodiment, the apparatus is capable of accessing pressures and temperatures of 0.2-2 GPa and 400-1200° C., respectively. Following a run, the release sleeve may be at least partially dissolved or etched to facilitate removal of the capsule from the apparatus.

Abstract translation: 一种用于加工超临界流体的改进的高压装置和相关方法。 在具体实施例中，本装置包括胶囊，释放套筒，加热器，至少一个陶瓷片段或环，但可以是多个片段或环，任选地，存在一个或多个划痕和/或裂纹。 在具体实施例中，该装置可选地具有包含每个陶瓷环的金属套筒。 该设备还具有高强度外壳，具有相关绝缘的端部法兰和电源控制系统。 在具体实施例中，该装置能够分别访问0.2-2GPa和400-1200℃的压力和温度。 在运行之后，释放套筒可以至少部分地溶解或蚀刻以便于从装置中取出胶囊。

公开(公告)号：US20100031875A1

公开(公告)日：2010-02-11

申请号：US12534844

申请日：2009-08-03

Applicant: MARK P. D'EVELYN

Inventor： MARK P. D'EVELYN

IPC: C30B7/10

CPC classification number: C30B29/406 ,  B01J3/008 ,  B01J3/042 ,  B01J3/065 ,  B01J2203/0665 ,  B01J2203/068 ,  B30B11/002 ,  C30B7/10

Abstract: A method for large-scale manufacturing of gallium nitride boules. Large-area single crystal seed plates are suspended in a rack, placed in a large diameter autoclave or internally-heated high pressure apparatus along with ammonia and a mineralizer, and grown ammonothermally. The seed orientation and mounting geometry are chosen to provide efficient utilization of the seed plates and of the volume inside the autoclave or high pressure apparatus. The method is scalable up to very large volumes and is cost effective.

Abstract translation: 一种大规模生产氮化镓颗粒的方法。 将大面积单晶种子板悬挂在机架中，与氨和矿化剂一起放置在大直径的高压釜或内部加热的高压装置中，并进行氨热生长。 选择种子取向和安装几何形状以提供有效利用种子板和高压釜或高压装置内的体积。 该方法可扩展到非常大的卷，并且具有成本效益。

公开(公告)号：US20090301387A1

公开(公告)日：2009-12-10

申请号：US12133364

申请日：2008-06-05

Applicant: MARK P. D'EVELYN

Inventor： MARK P. D'EVELYN

IPC: C30B19/08

CPC classification number: C30B29/406 ,  B01J3/008 ,  B01J3/042 ,  B01J3/065 ,  B01J2203/0665 ,  B01J2203/067 ,  B01J2203/068 ,  B30B11/005 ,  C30B7/10 ,  C30B29/403 ,  Y02P20/544 ,  Y10T117/10 ,  Y10T117/1024 ,  Y10T117/1096

Abstract: A high pressure apparatus and related methods for processing supercritical fluids. In a specific embodiment, the present apparatus includes a capsule, a heater, at least one ceramic ring but can be multiple rings, optionally, with one or more scribe marks and/or cracks present. In a specific embodiment, the apparatus optionally has a metal sleeve containing each ceramic ring. The apparatus also has a high-strength enclosure, end flanges with associated insulation, and a power control system. IN a specific embodiment, the apparatus is capable of accessing pressures and temperatures of 0.2-2 GPa and 400-1200° C., respectively.

Abstract translation: 一种用于加工超临界流体的高压装置及相关方法。 在具体实施例中，本装置包括胶囊，加热器，至少一个陶瓷环，但可以是多个环，任选地，存在一个或多个划痕和/或裂纹。 在具体实施例中，该装置可选地具有包含每个陶瓷环的金属套筒。 该设备还具有高强度外壳，具有相关绝缘的端部法兰和电源控制系统。 在具体实施例中，该装置能够分别访问0.2-2GPa和400-1200℃的压力和温度。

公开(公告)号：US20110100291A1

公开(公告)日：2011-05-05

申请号：US12697171

申请日：2010-01-29

Applicant: MARK P. D'EVELYN

Inventor： MARK P. D'EVELYN

IPC: C30B11/00 ,  C30B25/00

CPC classification number: C30B7/105 ,  C30B29/406 ,  Y10T117/1096

Abstract: A method of operating a high pressure system for growth of gallium nitride containing materials. The method comprises providing a high pressure apparatus comprising a growth region and feedstock region. The high pressure reactor comprises a high pressure enclosure and is configured within a primary containment structure. The method includes operating an exhaust system coupled to the primary containment structure. The exhaust system is configured to remove ammonia gas derived from at least 0.3 liters of ammonia liquid.

Abstract translation: 一种用于生长含氮化镓的材料的高压系统的方法。 该方法包括提供包括生长区域和原料区域的高压装置。 高压反应器包括高压外壳，并配置在初级容纳结构内。 该方法包括操作耦合到主容纳结构的排气系统。 排气系统构造成去除源自至少0.3升氨液体的氨气。

公开(公告)号：US20100031874A1

公开(公告)日：2010-02-11

申请号：US12534849

申请日：2009-08-03

Applicant: MARK P. D'EVELYN

Inventor： MARK P. D'EVELYN

IPC: C30B7/10 ,  B01J3/04

CPC classification number: B01J3/008 ,  B01J3/062 ,  B01J2203/0665 ,  B01J2203/068 ,  C30B7/10 ,  C30B29/406 ,  Y10T117/1096

Abstract: An apparatus and associated method for large-scale manufacturing of gallium nitride is provided. The apparatus comprises a large diameter autoclave and a raw material basket. Methods include metered addition of dopants in the raw material and control of the atmosphere during crystal growth. The apparatus and methods are scalable up to very large volumes and are cost effective.

Abstract translation: 提供了用于大规模制造氮化镓的装置和相关方法。 该装置包括大直径高压釜和原料篮。 方法包括在原料中计量添加掺杂剂并在晶体生长期间控制大气。 该设备和方法可扩展到非常大的体积，并且具有成本效益。

公开(公告)号：US20100031876A1

公开(公告)日：2010-02-11

申请号：US12534857

申请日：2009-08-04

Applicant: MARK P. D'EVELYN

Inventor： MARK P. D'EVELYN

IPC: C30B7/10 ,  B01J3/04

CPC classification number: B01J3/008 ,  B01J3/062 ,  B01J2203/0665 ,  B01J2203/068 ,  C30B7/10 ,  C30B29/403 ,  C30B29/406 ,  Y10T117/1008

Abstract: A method for large-scale manufacturing of gallium nitride includes a process for reducing and/or minimizing contamination in the crystals, for solvent addition to an autoclave, for improving or optimizing the solvent atmosphere composition, for removal of the solvent from the autoclave, and for recycling of the solvent. The method is scalable up to large volumes and is cost effective.

Abstract translation: 用于大规模制造氮化镓的方法包括用于减少和/或最小化晶体中的污染物的方法，用于溶剂添加到高压釜中，用于改进或优化溶剂气氛组合物，用于从高压釜中除去溶剂，以及 用于回收溶剂。 该方法可扩展到大容量，并且具有成本效益。

公开(公告)号：US20100031873A1

公开(公告)日：2010-02-11

申请号：US12534848

申请日：2009-08-03

Applicant: MARK P. D'EVELYN

Inventor： MARK P. D'EVELYN

IPC: C30B7/10

CPC classification number: C30B29/406 ,  B01J3/008 ,  B01J3/042 ,  B01J3/065 ,  B01J2203/0665 ,  B01J2203/068 ,  B30B11/002 ,  C30B7/10 ,  Y10T117/1096

Abstract: An apparatus and associated method for large-scale manufacturing of gallium nitride is provided. The apparatus comprises a large diameter autoclave and a raw material basket. Methods include metered addition of dopants in the raw material and control of the atmosphere during crystal growth. The apparatus and methods are scalable up to very large volumes and are cost effective.

Abstract translation: 提供了用于大规模制造氮化镓的装置和相关方法。 该装置包括大直径高压釜和原料篮。 方法包括在原料中计量添加掺杂剂并在晶体生长期间控制大气。 该设备和方法可扩展到非常大的体积，并且具有成本效益。