发明申请
US20100148143A1 NONVOLATILE MEMORY ELEMENT, MANUFACTURING METHOD THEREOF, AND NONVOLATILE SEMICONDUCTOR APPARATUS USING NONVOLATILE MEMORY ELEMENT
有权
非易失性存储元件，其制造方法和非易失性存储器元件的非线性半导体器件
- 专利标题： NONVOLATILE MEMORY ELEMENT, MANUFACTURING METHOD THEREOF, AND NONVOLATILE SEMICONDUCTOR APPARATUS USING NONVOLATILE MEMORY ELEMENT
- 专利标题（中）： 非易失性存储元件，其制造方法和非易失性存储器元件的非线性半导体器件
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申请号： US12600793申请日： 2008-05-16
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公开(公告)号： US20100148143A1公开(公告)日： 2010-06-17
- 发明人: Satoru Fujii , Yoshihiko Kanzawa , Takeshi Takagi , Kazuhiko Shimakawa
- 申请人： Satoru Fujii , Yoshihiko Kanzawa , Takeshi Takagi , Kazuhiko Shimakawa
- 优先权： JP2007-132893 20070518
- 国际申请： PCT/JP2008/001230 WO 20080516
- 主分类号： H01L45/00
- IPC分类号： H01L45/00 ; H01L21/16
摘要：
A nonvolatile semiconductor apparatus of the present invention comprises (103), a second electrode (105), and a resistance variable layer (104) disposed between the first electrode (103) and the second electrode (105), a resistance value of the resistance variable layer being switchable reversibly in response to an electric signal applied between the electrodes (103), (105), wherein the resistance variable layer (104) comprises an oxide containing tantalum and nitrogen.
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