Invention Application
- Patent Title: MONITORING METHOD FOR THROUGH-SILICON VIAS OF THREE-DIMENSIONAL INTERGRATED CIRCUIT (3D IC) AND APPARATUS USING THE SAME
- Patent Title (中): 三维集成电路（3D IC）的通孔硅的监视方法及其使用的装置
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Application No.: US12435311Application Date: 2009-05-04
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Publication No.: US20100153043A1Publication Date: 2010-06-17
- Inventor: Keng-Li SU , Chih Sheng LIN , Chih-Wen HSIAO
- Applicant: Keng-Li SU , Chih Sheng LIN , Chih-Wen HSIAO
- Applicant Address: TW HSINCHU
- Assignee: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
- Current Assignee: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
- Current Assignee Address: TW HSINCHU
- Priority: TWTW097149117 20081217
- Main IPC: G06F19/00
- IPC: G06F19/00 ; G01R13/00
Abstract:
A monitoring method for Through-Silicon Vias (TSVs) of a three-dimensional integrated circuit (3D IC) is provided, wherein the 3D IC includes a plurality of TSVs, and the method includes: providing a plurality of inverters; connecting the inverters with the TSVs as a circuit; enabling the circuit to oscillate; measuring an output signal on an output end of one of the inverters; and determining the characteristic of TSVs of the 3D IC based on the output signal.
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