发明申请
- 专利标题: PROGRAMMING ORDERS FOR REDUCING DISTORTION IN ARRAYS OF MULTI-LEVEL ANALOG MEMORY CELLS
- 专利标题(中): 用于减少多级模拟记忆细胞阵列失真的编程方式
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申请号: US12721585申请日: 2010-03-11
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公开(公告)号: US20100157675A1公开(公告)日: 2010-06-24
- 发明人: Ofir Shalvi , Eyal Gurgi , Uri Perlmutter , Oren Golov
- 申请人: Ofir Shalvi , Eyal Gurgi , Uri Perlmutter , Oren Golov
- 申请人地址: IL Herzliya Pituach
- 专利权人: ANOBIT TECHNOLOGIES LTD
- 当前专利权人: ANOBIT TECHNOLOGIES LTD
- 当前专利权人地址: IL Herzliya Pituach
- 主分类号: G11C16/04
- IPC分类号: G11C16/04
摘要:
A method for data storage includes predefining an order of programming a plurality of analog memory cells that are arranged in rows. The order specifies that for a given row having neighboring rows on first and second sides, the memory cells in the given row are programmed only while the memory cells in the neighboring rows on at least one of the sides are in an erased state, and that the memory cells in the given row are programmed to assume a highest programming level, which corresponds to a largest analog value among the programming levels of the cells, only after programming all the memory cells in the given row to assume the programming levels other than the highest level. Data is stored in the memory cells by programming the memory cells in accordance with the predefined order.
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