发明申请
- 专利标题: Distributed VDC for SRAM Memory
- 专利标题(中): 分布式VDC用于SRAM存储器
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申请号: US12338732申请日: 2008-12-18
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公开(公告)号: US20100157692A1公开(公告)日: 2010-06-24
- 发明人: Li-Wen Wang , Yen-Huei Chen , Chen-Lin Yang , Hsien-Yu Pan , Shao-Yu Chou , Hung-Jen Liao
- 申请人: Li-Wen Wang , Yen-Huei Chen , Chen-Lin Yang , Hsien-Yu Pan , Shao-Yu Chou , Hung-Jen Liao
- 主分类号: G11C7/00
- IPC分类号: G11C7/00 ; G11C5/14
摘要:
An integrated circuit structure includes a memory. The memory includes a first memory macro and a second memory macro identical to the first memory macro. A first power block is connected to the first memory macro and is configured to provide a regulated voltage to the first memory macro. The first power block has a first input and a first output. A second power block substantially identical to the first power block is connected to the second memory macro and is configured to provide the regulated voltage to the second memory macro. The second power block has a second input and a second output. The first input and the second input are interconnected. The first output and the second output are interconnected.
公开/授权文献
- US08077517B2 Distributed VDC for SRAM memory 公开/授权日:2011-12-13
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