发明申请
- 专利标题： Methods of manufacturing oxide semiconductor thin film transistor
- 专利标题（中）： 氧化物半导体薄膜晶体管的制造方法
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申请号： US12659148申请日： 2010-02-26
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公开(公告)号： US20100159642A1公开(公告)日： 2010-06-24
- 发明人: Jisim Jung , Youngsoo Park , Sangyoon Lee , Changjung Kim , Taesang Kim , Jangyeon Kwon , Kyungseok Son
- 申请人： Jisim Jung , Youngsoo Park , Sangyoon Lee , Changjung Kim , Taesang Kim , Jangyeon Kwon , Kyungseok Son
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 优先权： KR10-2008-0053128 20080605
- 主分类号： H01L21/336
- IPC分类号： H01L21/336 ; H01L21/04
摘要：
Provided is a method of manufacturing an oxide semiconductor thin film transistor using a transparent oxide semiconductor as a material for a channel. The method of manufacturing the oxide semiconductor thin film transistor includes forming a passivation layer on a channel layer and performing an annealing process for one hour or more at a temperature of about 100° C. or above.