发明申请
- 专利标题： MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
- 专利标题（中）： 半导体器件的制造方法
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申请号： US12717550申请日： 2010-03-04
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公开(公告)号： US20100159702A1公开(公告)日： 2010-06-24
- 发明人: Masaru YAMADA , Akihiko Tsudumitani
- 申请人： Masaru YAMADA , Akihiko Tsudumitani
- 申请人地址： JP Osaka
- 专利权人： PANASONIC CORPORATION
- 当前专利权人： PANASONIC CORPORATION
- 当前专利权人地址： JP Osaka
- 优先权： JP2005-335782 20051121
- 主分类号： H01L21/76
- IPC分类号： H01L21/76
摘要：
A first film and a second film are formed on a semiconductor substrate in this order. A resist pattern is formed on the second film. An opening is formed by removing the second film exposed between the resist pattern at a state where the second film remains on the bottom. A first removal preventing film is formed on the side wall of the opening and the residual film is removed at a state where the projecting part of the second film protruding from the side wall to the opening remains. The first film exposed in the opening is removed. A second removal preventing film is formed on the first removal preventing film and the surface of the semiconductor substrate exposed in the opening is removed at a state where the projecting part of the semiconductor substrate protruding from the side wall to the opening remains and a round part is formed at the projecting part of the semiconductor substrate. The semiconductor substrate exposed in the opening is further removed.
公开/授权文献
- US08034721B2 Manufacturing method of semiconductor device 公开/授权日：2011-10-11
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