公开(公告)号：US20070196965A1

公开(公告)日：2007-08-23

申请号：US11600068

申请日：2006-11-16

申请人： Masaru Yamada ,  Akihiko Tsudumitani

发明人： Masaru Yamada ,  Akihiko Tsudumitani

IPC分类号： H01L21/84 ,  H01L21/00

CPC分类号： H01L21/76232

摘要： A first film and a second film are formed on a semiconductor substrate in this order. A resist pattern is formed on the second film. An opening is formed by removing the second film exposed between the resist pattern at a state where the second film remains on the bottom. A first removal preventing film is formed on the side wall of the opening and the residual film is removed at a state where the projecting part of the second film protruding from the sidewall to the opening remains. The first film exposed in the opening is removed. A second removal preventing film is formed on the first removal preventing film and the surface of the semiconductor substrate exposed in the opening is removed at a state where the projecting part of the semiconductor substrate protruding from the side wall to the opening remains and a round part is formed at the projecting part of the semiconductor substrate. The semiconductor substrate exposed in the opening is further removed.

摘要翻译： 依次在半导体衬底上形成第一膜和第二膜。 在第二膜上形成抗蚀剂图案。 通过在第二膜保持在底部的状态下去除在抗蚀剂图案之间暴露的第二膜而形成开口。 在开口的侧壁上形成有第一去除防护膜，并且在从侧壁突出到开口部的第二膜的突出部分残留的状态下去除残留膜。 去除暴露在开口中的第一个薄膜。 在第一去除防止膜上形成第二防除去除膜，并且在从侧壁突出到开口的半导体衬底的突出部分残留的状态下去除在开口中暴露的半导体衬底的表面， 形成在半导体衬底的突出部分。 在开口中暴露的半导体衬底被进一步去除。

公开(公告)号：US08034721B2

公开(公告)日：2011-10-11

申请号：US12717550

申请日：2010-03-04

申请人： Masaru Yamada ,  Akihiko Tsudumitani

发明人： Masaru Yamada ,  Akihiko Tsudumitani

IPC分类号： H01L21/302

CPC分类号： H01L21/76232

摘要： A first film and a second film are formed on a semiconductor substrate in this order. A resist pattern is formed on the second film. An opening is formed by removing the second film exposed between the resist pattern at a state where the second film remains on the bottom. A first removal preventing film is formed on the side wall of the opening and the residual film is removed at a state where the projecting part of the second film protruding from the side wall to the opening remains. The first film exposed in the opening is removed. A second removal preventing film is formed on the first removal preventing film and the surface of the semiconductor substrate exposed in the opening is removed at a state where the projecting part of the semiconductor substrate protruding from the side wall to the opening remains and a round part is formed at the projecting part of the semiconductor substrate. The semiconductor substrate exposed in the opening is further removed.

摘要翻译： 依次在半导体衬底上形成第一膜和第二膜。 在第二膜上形成抗蚀剂图案。 通过在第二膜保持在底部的状态下去除在抗蚀剂图案之间暴露的第二膜而形成开口。 在开口的侧壁上形成有第一去除防止膜，并且在从侧壁突出到开口的第二膜的突出部分残留的状态下，残留的膜被去除。 去除暴露在开口中的第一个薄膜。 在第一去除防止膜上形成第二防除膜，并且在从侧壁突出到开口的半导体衬底的突出部分残留的状态下，在开口中暴露的半导体衬底的表面被去除，并且圆形部分 形成在半导体衬底的突出部分。 在开口中暴露的半导体衬底被进一步去除。

公开(公告)号：US20100159702A1

公开(公告)日：2010-06-24

申请号：US12717550

申请日：2010-03-04

申请人： Masaru YAMADA ,  Akihiko Tsudumitani

发明人： Masaru YAMADA ,  Akihiko Tsudumitani

IPC分类号： H01L21/76

CPC分类号： H01L21/76232

摘要： A first film and a second film are formed on a semiconductor substrate in this order. A resist pattern is formed on the second film. An opening is formed by removing the second film exposed between the resist pattern at a state where the second film remains on the bottom. A first removal preventing film is formed on the side wall of the opening and the residual film is removed at a state where the projecting part of the second film protruding from the side wall to the opening remains. The first film exposed in the opening is removed. A second removal preventing film is formed on the first removal preventing film and the surface of the semiconductor substrate exposed in the opening is removed at a state where the projecting part of the semiconductor substrate protruding from the side wall to the opening remains and a round part is formed at the projecting part of the semiconductor substrate. The semiconductor substrate exposed in the opening is further removed.

摘要翻译： 依次在半导体衬底上形成第一膜和第二膜。 在第二膜上形成抗蚀剂图案。 通过在第二膜保持在底部的状态下去除在抗蚀剂图案之间暴露的第二膜而形成开口。 在开口的侧壁上形成有第一去除防止膜，并且在从侧壁突出到开口的第二膜的突出部分残留的状态下，残留的膜被去除。 去除暴露在开口中的第一个薄膜。 在第一去除防止膜上形成第二防除膜，并且在从侧壁突出到开口的半导体衬底的突出部分残留的状态下，在开口中暴露的半导体衬底的表面被去除，并且圆形部分 形成在半导体衬底的突出部分。 在开口中暴露的半导体衬底被进一步去除。

公开(公告)号：US07696099B2

公开(公告)日：2010-04-13

申请号：US11600068

申请日：2006-11-16

申请人： Masaru Yamada ,  Akihiko Tsudumitani

发明人： Masaru Yamada ,  Akihiko Tsudumitani

IPC分类号： H01L21/302

CPC分类号： H01L21/76232

摘要： A first film and a second film are formed on a semiconductor substrate in this order. A resist pattern is formed on the second film. An opening is formed by removing the second film exposed between the resist pattern at a state where the second film remains on the bottom. A first removal preventing film is formed on the side wall of the opening and the residual film is removed at a state where the projecting part of the second film protruding from the sidewall to the opening remains. The first film exposed in the opening is removed. A second removal preventing film is formed on the first removal preventing film and the surface of the semiconductor substrate exposed in the opening is removed at a state where the projecting part of the semiconductor substrate protruding from the side wall to the opening remains and a round part is formed at the projecting part of the semiconductor substrate. The semiconductor substrate exposed in the opening is further removed.

摘要翻译： 依次在半导体衬底上形成第一膜和第二膜。 在第二膜上形成抗蚀剂图案。 通过在第二膜保持在底部的状态下去除在抗蚀剂图案之间暴露的第二膜而形成开口。 在开口的侧壁上形成有第一去除防护膜，并且在从侧壁突出到开口部的第二膜的突出部分残留的状态下去除残留膜。 去除暴露在开口中的第一个薄膜。 在第一去除防止膜上形成第二防除去除膜，并且在从侧壁突出到开口的半导体衬底的突出部分残留的状态下去除在开口中暴露的半导体衬底的表面， 形成在半导体衬底的突出部分。 在开口中暴露的半导体衬底被进一步去除。