发明申请
US20100162728A1 THERMOELECTRIC NANOWIRE ARRAY WITH LOW HEAT LEAKAGE AND MANUFACTURING METHOD THEREOF
审中-公开
具有低热泄漏和制造方法的热电纳米阵列
- 专利标题: THERMOELECTRIC NANOWIRE ARRAY WITH LOW HEAT LEAKAGE AND MANUFACTURING METHOD THEREOF
- 专利标题(中): 具有低热泄漏和制造方法的热电纳米阵列
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申请号: US12414796申请日: 2009-03-31
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公开(公告)号: US20100162728A1公开(公告)日: 2010-07-01
- 发明人: Wen-Jin Lee
- 申请人: Wen-Jin Lee
- 申请人地址: TW Hsinchu
- 专利权人: Industrial Technology Research Institute
- 当前专利权人: Industrial Technology Research Institute
- 当前专利权人地址: TW Hsinchu
- 优先权: TW097151825 20081231
- 主分类号: F25B21/04
- IPC分类号: F25B21/04 ; B05D5/12 ; C23C28/00
摘要:
A thermoelectric nanowire array with a low heat leakage and a manufacturing method thereof are described. Nanowire array units separated from each other are formed on a substrate, and an air wall is formed at a region on the substrate free of the nanowire array units. Or, a polymeric material having a low thermal conductivity is combined with a template material so as to form a composite template structure for nanowires to deposit therein. With the design of the air wall or the composite template structure, the thermal reflow phenomenon of the thermoelectric nanowire array is avoided, thereby greatly improving a thermal dissipation efficiency of the thermoelectric nanowire array.
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