发明申请
- 专利标题： COMPOUND SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- 专利标题（中）： 化合物半导体器件及其制造方法
-
申请号： US12639546申请日： 2009-12-16
-
公开(公告)号： US20100163929A1公开(公告)日： 2010-07-01
- 发明人: Toshihiro Ohki
- 申请人： Toshihiro Ohki
- 申请人地址： JP Kawasaki-shi, Kanagawa
- 专利权人： FUJITSU LIMITED
- 当前专利权人： FUJITSU LIMITED
- 当前专利权人地址： JP Kawasaki-shi, Kanagawa
- 优先权： JP2008-335161 20081226
- 主分类号： H01L29/778
- IPC分类号： H01L29/778 ; H01L21/28
摘要：
A compound semiconductor device includes a carrier transit layer formed over a substrate; a carrier supply layer formed over the carrier transit layer; a first metal film and a second metal film formed over the carrier supply layer; a first Al comprising film formed over the first metal film; a second Al comprising film formed over the second metal film; a first Au comprising film formed over the first metal film and is free of direct contact with the first Al comprising film; a second Au comprising film formed over the second metal film and free of direct contact with the second Al comprising film; and a gate electrode that is located over the carrier supply layer between the first metal film and the second metal film.
公开/授权文献
信息查询
IPC分类:
