发明申请
- 专利标题: SEMICONDUCTOR MEMORY DEVICE
- 专利标题(中): 半导体存储器件
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申请号: US12559358申请日: 2009-09-14
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公开(公告)号: US20100163943A1公开(公告)日: 2010-07-01
- 发明人: Tohru Ozaki
- 申请人: Tohru Ozaki
- 申请人地址: JP Tokyo
- 专利权人: KABUSHIKI KAISHA TOSHIBA
- 当前专利权人: KABUSHIKI KAISHA TOSHIBA
- 当前专利权人地址: JP Tokyo
- 优先权: JP2008-244358 20080924
- 主分类号: H01L27/115
- IPC分类号: H01L27/115 ; H01L21/8246
摘要:
A memory includes a first interlayer on transistors; a first and second plugs connected to the transistor; ferroelectric capacitors; a second interlayer covering a side surface of the capacitor; a local interconnection connecting the second plug to the upper electrode, wherein two upper electrodes adjacent to each other on the second plug are connected to the second plug, the lower electrodes adjacent to each other on the first plug are connected to the first plug, cell blocks comprising the connected capacitors are arranged, cell blocks adjacent to each other are arranged to be shifted by a half pitch of the local interconnection, a first gap between two capacitors adjacent to each other on the second plug is larger than twice a thickness of the second interlayer, and a second gap between the cell blocks adjacent to each other is smaller than twice the thickness of the second interlayer.