发明申请
- 专利标题： METHOD FOR FABRICATING PIP CAPACITOR
- 专利标题（中）： 制造电容器的方法
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申请号： US12632115申请日： 2009-12-07
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公开(公告)号： US20100163947A1公开(公告)日： 2010-07-01
- 发明人: Jong-Ho Lee
- 申请人： Jong-Ho Lee
- 优先权： KR10-2008-0134229 20081226
- 主分类号： H01L29/92
- IPC分类号： H01L29/92 ; H01L21/02
摘要：
A PIP capacitor and methods thereof. A method of fabricating a PIP capacitor may include forming a field oxide film over a silicon substrate to define a device isolating region and/or an active region. A method of fabricating a PIP capacitor may include forming a lower polysilicon electrode having doped impurities on and/or over an field oxide film. A method of fabricating a PIP capacitor may include performing an oxidizing step to form a first oxide film over a polysilicon and/or a second oxide film on and/or over an active region. A method of fabricating a PIP capacitor may include forming an upper polysilicon electrode on and/or over a region of a first oxide film and forming a gate electrode on and/or over a second oxide film at substantially the same time. A method of fabricating a PIP capacitor may include forming a polysilicon resistor. A PIP capacitor is disclosed.
公开/授权文献
- US08039355B2 Method for fabricating PIP capacitor 公开/授权日：2011-10-18
信息查询
IPC分类:
