发明申请
- 专利标题： SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- 专利标题（中）： 半导体器件及其制造方法
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申请号： US12644734申请日： 2009-12-22
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公开(公告)号： US20100163973A1公开(公告)日： 2010-07-01
- 发明人: Yuki Nakamura , Koji Shirai , Hirofumi Nagano , Jun Morioka , Tsubasa Yamada , Kazuaki Yamaura , Yasunori Iwatsu
- 申请人： Yuki Nakamura , Koji Shirai , Hirofumi Nagano , Jun Morioka , Tsubasa Yamada , Kazuaki Yamaura , Yasunori Iwatsu
- 申请人地址： JP Tokyo
- 专利权人： KABUSHIKI KAISHA TOSHIBA
- 当前专利权人： KABUSHIKI KAISHA TOSHIBA
- 当前专利权人地址： JP Tokyo
- 优先权： JP2008-335532 20081227
- 主分类号： H01L27/06
- IPC分类号： H01L27/06 ; H01L21/8234
摘要：
A semiconductor device includes a P-type substrate 1, an N-type buried layer 2, a P-type buried layer 3, N-type epitaxial layers 4, P-type diffusion layers 6, P-type diffusion layers 8, P-type diffusion layers 11, first electrodes formed on the P-type diffusion layers 11, N-type diffusion layers 9, P-type diffusion layers 12, N-type diffusion layers 13, second electrodes formed on the P-type diffusion layers 12 and the N-type diffusion layers 13, and gate electrodes 10 short-circuited with the second electrodes. The N-type buried layer 2 is in a floating state.
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