发明申请
- 专利标题: IMAGE SENSOR AND METHOD FOR MANUFACTURING THE SAME
- 专利标题(中): 图像传感器及其制造方法
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申请号: US12633619申请日: 2009-12-08
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公开(公告)号: US20100164033A1公开(公告)日: 2010-07-01
- 发明人: Min-Hyung Lee
- 申请人: Min-Hyung Lee
- 优先权: KR10-2008-0136315 20081230
- 主分类号: H01L31/0232
- IPC分类号: H01L31/0232 ; H01L21/768
摘要:
An image sensor and a method of manufacturing an image sensor. An image sensor may include a semiconductor substrate which may include a readout circuitry. An image sensor may include an interlayer dielectric over a semiconductor substrate, and/or a first metal pattern over an interlayer dielectric. An interconnection may penetrate an interlayer dielectric and/or may be connected to a readout circuitry. A first metal pattern may be formed over an interlayer dielectric, and/or may be connected to an interconnection. A second metal pattern may be formed over a first metal pattern. A photodiode pattern may be formed over a second metal pattern.
公开/授权文献
- US08119444B2 Method for manufacturing the image sensor 公开/授权日:2012-02-21
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