发明申请
- 专利标题： Through-Silicon Via With Air Gap
- 专利标题（中）： 通过硅片通过空气间隙
-
申请号： US12347745申请日： 2008-12-31
-
公开(公告)号： US20100164117A1公开(公告)日： 2010-07-01
- 发明人: Ming-Fa Chen
- 申请人： Ming-Fa Chen
- 主分类号： H01L23/48
- IPC分类号： H01L23/48 ; H01L21/311
摘要：
A semiconductor substrate having a through-silicon via with an air gap interposed between the through-silicon via and the semiconductor substrate is provided. An opening is formed partially through the semiconductor substrate. The opening is first lined with a liner and then the opening is filled with a conductive material. A backside of the semiconductor substrate is thinned to expose the liner, which is subsequently removed to form an air gap around the conductive material of the through-silicon via. A dielectric layer is formed of the backside of the semiconductor substrate to seal the air gap.
公开/授权文献
- US07910473B2 Through-silicon via with air gap 公开/授权日：2011-03-22
信息查询
IPC分类:
