发明申请
- 专利标题: Parametric Testline with Increased Test Pattern Areas
- 专利标题(中): 参数测试线与增加的测试模式区域
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申请号: US12704252申请日: 2010-02-11
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公开(公告)号: US20100164521A1公开(公告)日: 2010-07-01
- 发明人: Hsien-Wei Chen , Shih-Hsun Hsu , Hao-Yi Tsai , Shin-Puu Jeng
- 申请人: Hsien-Wei Chen , Shih-Hsun Hsu , Hao-Yi Tsai , Shin-Puu Jeng
- 申请人地址: TW Hsin-Chu
- 专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址: TW Hsin-Chu
- 主分类号: G01R31/02
- IPC分类号: G01R31/02
摘要:
An integrated circuit parametric testline providing increased test pattern areas is disclosed. The testline comprises a dielectric layer over a substrate, a plurality of probe pads over the dielectric layer, and a first device under test (DUT) formed in the testline in a space underlying the probe pads. The testline may also include a second DUT, which is formed in a space underlying the probe pads overlying the first DUT in an overlaying configuration. The testline may further include a polygon shaped probe pad structure providing an increased test pattern area between adjacent probe pads.
公开/授权文献
- US08125233B2 Parametric testline with increased test pattern areas 公开/授权日:2012-02-28
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