Parametric testline with increased test pattern areas
    1.
    发明申请
    Parametric testline with increased test pattern areas 有权
    参数测试线具有增加的测试图案区域

    公开(公告)号:US20080303539A1

    公开(公告)日:2008-12-11

    申请号:US11811135

    申请日:2007-06-08

    IPC分类号: G01R31/26

    摘要: An integrated circuit parametric testline providing increased test pattern areas is disclosed. The testline comprises a dielectric layer over a substrate, a plurality of probe pads over the dielectric layer, and a first device under test (DUT) formed in the testline in a space underlying the probe pads. The testline may also include a second DUT, which is formed in a space underlying the probe pads overlying the first DUT in an overlaying configuration. The testline may further include a polygon shaped probe pad structure providing an increased test pattern area between adjacent probe pads.

    摘要翻译: 公开了一种提供增加的测试图案区域的集成电路参数测试线。 测试线包括衬底上的电介质层,电介质层上的多个探针焊盘,以及形成在探针焊盘下方空间中的测试线中的第一被测器件(DUT)。 测试线还可以包括第二DUT,其以覆盖配置形成在覆盖第一DUT的探针焊盘下方的空间中。 测试线还可以包括多边形形状的探针焊盘结构,其提供相邻探针焊盘之间增加的测试图案区域。

    Parametric Testline with Increased Test Pattern Areas
    4.
    发明申请
    Parametric Testline with Increased Test Pattern Areas 有权
    参数测试线与增加的测试模式区域

    公开(公告)号:US20100164521A1

    公开(公告)日:2010-07-01

    申请号:US12704252

    申请日:2010-02-11

    IPC分类号: G01R31/02

    摘要: An integrated circuit parametric testline providing increased test pattern areas is disclosed. The testline comprises a dielectric layer over a substrate, a plurality of probe pads over the dielectric layer, and a first device under test (DUT) formed in the testline in a space underlying the probe pads. The testline may also include a second DUT, which is formed in a space underlying the probe pads overlying the first DUT in an overlaying configuration. The testline may further include a polygon shaped probe pad structure providing an increased test pattern area between adjacent probe pads.

    摘要翻译: 公开了一种提供增加的测试图案区域的集成电路参数测试线。 测试线包括衬底上的电介质层,电介质层上的多个探针焊盘,以及形成在探针焊盘下方空间中的测试线中的第一被测器件(DUT)。 测试线还可以包括第二DUT,其以覆盖配置形成在覆盖第一DUT的探针焊盘下方的空间中。 测试线还可以包括多边形形状的探针焊盘结构,其提供相邻探针焊盘之间增加的测试图案区域。

    Metal e-Fuse structure design
    6.
    发明申请
    Metal e-Fuse structure design 有权
    金属电子保险丝结构设计

    公开(公告)号:US20080217735A1

    公开(公告)日:2008-09-11

    申请号:US11716206

    申请日:2007-03-09

    IPC分类号: H01L29/00

    摘要: An integrated circuit structure is provided. The integrated circuit structure includes a semiconductor substrate; a dielectric layer over the semiconductor substrate; a metal fuse in the dielectric layer; a dummy pattern adjacent the metal fuse; and a metal line in the dielectric layer, wherein a thickness of the metal fuse is substantially less than a thickness of the metal line.

    摘要翻译: 提供集成电路结构。 集成电路结构包括半导体衬底; 半导体衬底上的电介质层; 电介质层中的金属保险丝; 与金属保险丝相邻的虚拟图案; 以及介电层中的金属线,其中金属熔丝的厚度基本上小于金属线的厚度。

    Parametric testline with increased test pattern areas
    9.
    发明授权
    Parametric testline with increased test pattern areas 有权
    参数测试线具有增加的测试图案区域

    公开(公告)号:US08125233B2

    公开(公告)日:2012-02-28

    申请号:US12704252

    申请日:2010-02-11

    IPC分类号: G01R31/26

    摘要: An integrated circuit parametric testline providing increased test pattern areas is disclosed. The testline comprises a dielectric layer over a substrate, a plurality of probe pads over the dielectric layer, and a first device under test (DUT) formed in the testline in a space underlying the probe pads. The testline may also include a second DUT, which is formed in a space underlying the probe pads overlying the first DUT in an overlaying configuration. The testline may further include a polygon shaped probe pad structure providing an increased test pattern area between adjacent probe pads.

    摘要翻译: 公开了一种提供增加的测试图案区域的集成电路参数测试线。 测试线包括衬底上的电介质层,电介质层上的多个探针焊盘,以及形成在探针焊盘下方空间中的测试线中的第一被测器件(DUT)。 测试线还可以包括第二DUT,其以覆盖配置形成在覆盖第一DUT的探针焊盘下方的空间中。 测试线还可以包括多边形形状的探针焊盘结构,其提供相邻探针焊盘之间增加的测试图案区域。

    Metal e-fuse structure design
    10.
    发明授权
    Metal e-fuse structure design 有权
    金属电熔丝结构设计

    公开(公告)号:US08749020B2

    公开(公告)日:2014-06-10

    申请号:US11716206

    申请日:2007-03-09

    IPC分类号: H01L29/00

    摘要: An integrated circuit structure is provided. The integrated circuit structure includes a semiconductor substrate; a dielectric layer over the semiconductor substrate; a metal fuse in the dielectric layer; a dummy pattern adjacent the metal fuse; and a metal line in the dielectric layer, wherein a thickness of the metal fuse is substantially less than a thickness of the metal line.

    摘要翻译: 提供集成电路结构。 集成电路结构包括半导体衬底; 半导体衬底上的电介质层; 电介质层中的金属保险丝; 与金属保险丝相邻的虚拟图案; 以及介电层中的金属线,其中金属熔丝的厚度基本上小于金属线的厚度。