Invention Application
- Patent Title: INTERNAL WRITE/READ PULSE GENERATING CIRCUIT OF A SEMICONDUCTOR MEMORY APPARATUS
- Patent Title (中): 半导体内存装置的内部写/读脉冲发生电路
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Application No.: US12480938Application Date: 2009-06-09
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Publication No.: US20100165781A1Publication Date: 2010-07-01
- Inventor: SANG HEE LEE
- Applicant: SANG HEE LEE
- Applicant Address: KR Gyeonggi-do
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Gyeonggi-do
- Priority: KR10-2008-0136423 20081230
- Main IPC: G11C8/18
- IPC: G11C8/18 ; G11C7/00
Abstract:
A control clock generating unit outputs a clock as a control clock when a column address strobe pulse is input and fixes the control clock to a specific level when an all bank precharge signal or a refresh signal is enabled. An internal pulse generating unit outputs an external write pulse or an external read pulse as an internal write pulse or an internal read pulse in response to the control clock.
Public/Granted literature
- US07990801B2 Internal write/read pulse generating circuit of a semiconductor memory apparatus Public/Granted day:2011-08-02
Information query
