A method for fabricating thermoelectric device is provided. The method comprises placing a first electrode in a die, forming a first interlayer on an upper surface of the first electrode; positioning a separating plate on an upper surface of the first interlayer to divide an inner space of the die into a plurality of cells, and depositing a first thermoelectric material on the first interlayer within a first fraction of the cells, and depositing a second thermoelectric material on the first interlayer within a second fraction of the cells, sintering the die contents, and removing the separating plate after sintering to obtain a π shaped thermoelectric device.