Invention Application
- Patent Title: INTEGRATED CIRCUIT COMPRISING A GRADUALLY DOPED BIPOLAR TRANSISTOR AND CORRESPONDING FABRICATION PROCESS
- Patent Title (中): 集成电路包含一个等级双极双极晶体管和相应的制造工艺
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Application No.: US12720404Application Date: 2010-03-09
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Publication No.: US20100167488A1Publication Date: 2010-07-01
- Inventor: Damien Lenoble , Thierry Schwartzmann , Laurence Boissonnet
- Applicant: Damien Lenoble , Thierry Schwartzmann , Laurence Boissonnet
- Applicant Address: FR Montrouge
- Assignee: STMICROELECTRONICS SA.
- Current Assignee: STMICROELECTRONICS SA.
- Current Assignee Address: FR Montrouge
- Priority: FR0511621 20051116
- Main IPC: H01L21/331
- IPC: H01L21/331
Abstract:
An integrated circuit includes a bipolar transistor comprising a substrate and a collector formed in the substrate. The collector includes a highly doped lateral zone, a very lightly doped central zone and a lightly doped intermediate zone located between the central zone and the lateral zone 4a of the collector. The substrate includes a lightly doped lateral zone and a highly doped central zone. The dopant species in the zone of the substrate are electrically inactive.
Public/Granted literature
- US08168504B2 Integrated circuit comprising a gradually doped bipolar transistor and corresponding fabrication process Public/Granted day:2012-05-01
Information query
IPC分类:
