公开(公告)号：US20070108555A1

公开(公告)日：2007-05-17

申请号：US11560228

申请日：2006-11-15

Applicant: Damien Lenoble ,  Thierry Schwartzmann ,  Laurence Boissonnet

Inventor： Damien Lenoble ,  Thierry Schwartzmann ,  Laurence Boissonnet

IPC: H01L31/11

CPC classification number: H01L29/66242 ,  H01L29/0821 ,  H01L29/7317 ,  H01L29/7378

Abstract: An integrated circuit includes a bipolar transistor comprising a substrate and a collector formed in the substrate. The collector includes a highly doped lateral zone, a very lightly doped central zone and a lightly doped intermediate zone located between the central zone and the lateral zone 4a of the collector. The substrate includes a lightly doped lateral zone and a highly doped central zone. The dopant species in the zone of the substrate are electrically inactive.

Abstract translation: 集成电路包括双极晶体管，其包括基板和形成在基板中的集电极。 集电极包括高度掺杂的横向区域，非常轻掺杂的中心区域和位于集电体的中心区域和侧向区域4a之间的轻掺杂的中间区域。 衬底包括轻掺杂的侧向区和高度掺杂的中心区。 衬底区域中的掺杂剂物质是电不活泼的。

公开(公告)号：US07015105B2

公开(公告)日：2006-03-21

申请号：US10169237

申请日：2001-10-26

Applicant: Laurence Boissonnet ,  Dominique Golanski ,  Bruno Rauber ,  Andre Granier

Inventor： Laurence Boissonnet ,  Dominique Golanski ,  Bruno Rauber ,  Andre Granier

IPC: H01L21/8234

CPC classification number: H01L27/088 ,  H01L21/26586 ,  H01L21/8234 ,  H01L29/6659

Abstract: A method of simultaneously fabricating a pair of insulated gate transistors respectively having a thin oxide and a thick oxide, and an integrated circuit including a pair of transistors of this kind. Forming low-doped NLDD areas of the thin oxide second transistor includes implanting a first dopant having a first concentration and implanting a second dopant having a second concentration lower than the first concentration. Forming low-doped areas NLDD of the first, thick oxide transistor includes only said implantation of the second dopant.

Abstract translation: 同时制造分别具有薄氧化物和厚氧化物的一对绝缘栅极晶体管的方法，以及包括这种一对晶体管的集成电路。 形成薄氧化物第二晶体管的低掺杂NLDD区域包括植入具有第一浓度的第一掺杂物并且注入具有低于第一浓度的第二浓度的第二掺杂剂。 形成第一厚氧化物晶体管的低掺杂区域NLDD仅包括第二掺杂剂的所述注入。

公开(公告)号：US20100167488A1

公开(公告)日：2010-07-01

申请号：US12720404

申请日：2010-03-09

Applicant: Damien Lenoble ,  Thierry Schwartzmann ,  Laurence Boissonnet

Inventor： Damien Lenoble ,  Thierry Schwartzmann ,  Laurence Boissonnet

IPC: H01L21/331

CPC classification number: H01L29/66242 ,  H01L29/0821 ,  H01L29/7317 ,  H01L29/7378

Abstract: An integrated circuit includes a bipolar transistor comprising a substrate and a collector formed in the substrate. The collector includes a highly doped lateral zone, a very lightly doped central zone and a lightly doped intermediate zone located between the central zone and the lateral zone 4a of the collector. The substrate includes a lightly doped lateral zone and a highly doped central zone. The dopant species in the zone of the substrate are electrically inactive.

Abstract translation: 集成电路包括双极晶体管，其包括基板和形成在基板中的集电极。 集电极包括高度掺杂的横向区域，非常轻掺杂的中心区域和位于集电体的中心区域和侧向区域4a之间的轻掺杂的中间区域。 衬底包括轻掺杂的侧向区和高度掺杂的中心区。 衬底区域中的掺杂剂物质是电不活泼的。

公开(公告)号：US07705427B2

公开(公告)日：2010-04-27

申请号：US11560228

申请日：2006-11-15

Applicant: Damien Lenoble ,  Thierry Schwartzmann ,  Laurence Boissonnet

Inventor： Damien Lenoble ,  Thierry Schwartzmann ,  Laurence Boissonnet

IPC: H01L31/11

CPC classification number: H01L29/66242 ,  H01L29/0821 ,  H01L29/7317 ,  H01L29/7378

Abstract: An integrated circuit includes a bipolar transistor comprising a substrate and a collector formed in the substrate. The collector includes a highly doped lateral zone, a very lightly doped central zone and a lightly doped intermediate zone located between the central zone and the lateral zone 4a of the collector. The substrate includes a lightly doped lateral zone and a highly doped central zone. The dopant species in the zone of the substrate are electrically inactive.

Abstract translation: 集成电路包括双极晶体管，其包括基板和形成在基板中的集电极。 集电极包括高度掺杂的横向区域，非常轻掺杂的中心区域和位于集电体的中心区域和侧向区域4a之间的轻掺杂的中间区域。 衬底包括轻掺杂的侧向区和高度掺杂的中心区。 衬底区域中的掺杂剂物质是电不活泼的。

公开(公告)号：US08168504B2

公开(公告)日：2012-05-01

申请号：US12720404

申请日：2010-03-09

Applicant: Damien Lenoble ,  Thierry Schwartzmann ,  Laurence Boissonnet

Inventor： Damien Lenoble ,  Thierry Schwartzmann ,  Laurence Boissonnet

IPC: H01L21/331

CPC classification number: H01L29/66242 ,  H01L29/0821 ,  H01L29/7317 ,  H01L29/7378

Abstract: An integrated circuit includes a bipolar transistor comprising a substrate and a collector formed in the substrate. The collector includes a highly doped lateral zone, a very lightly doped central zone and a lightly doped intermediate zone located between the central zone and the lateral zone 4a of the collector. The substrate includes a lightly doped lateral zone and a highly doped central zone. The dopant species in the zone of the substrate are electrically inactive.

Abstract translation: 集成电路包括双极晶体管，其包括基板和形成在基板中的集电极。 集电极包括高度掺杂的横向区域，非常轻掺杂的中心区域和位于集电体的中心区域和侧向区域4a之间的轻掺杂的中间区域。 衬底包括轻掺杂的侧向区和高度掺杂的中心区。 衬底区域中的掺杂剂物质是电不活泼的。