发明申请
- 专利标题： HIGH QUALITY DOPED ZnO THIN FILMS
- 专利标题（中）： 高质量掺杂ZnO薄膜
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申请号： US12441707申请日： 2008-03-17
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公开(公告)号： US20100171082A1公开(公告)日： 2010-07-08
- 发明人: Timothy A. Gessert , Joel N. Duenow , Teresa Barnes , Timothy J. Coutts
- 申请人： Timothy A. Gessert , Joel N. Duenow , Teresa Barnes , Timothy J. Coutts
- 申请人地址： US CO Golden
- 专利权人： ALLIANCE FOR SUSTAINABLE ENERGY , LLC
- 当前专利权人： ALLIANCE FOR SUSTAINABLE ENERGY , LLC
- 当前专利权人地址： US CO Golden
- 国际申请： PCT/US2008/057244 WO 20080317
- 主分类号： H01B1/16
- IPC分类号： H01B1/16 ; C23C14/34
摘要：
A transparent conducting oxide (TCO) film comprising: a TCO layer, and dopants selected from the elements consisting of Vanadium, Molybdenum, Tantalum, Niobium, Antimony, Titanium, Zirconium, and Hafnium, wherein the elements are n-type dopants; and wherein the transparent conducting oxide is characterized by an improved electron mobility of about 42 cm2/V-sec while simultaneously maintaining a high carrier density of ˜4.4e×1020 cm−3.
公开/授权文献
- US08253012B2 High quality transparent conducting oxide thin films 公开/授权日：2012-08-28
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