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公开(公告)号：US08253012B2
公开(公告)日：2012-08-28
申请号：US12441707
申请日：2008-03-17
IPC分类号： H01B1/08 , H01L31/0224 , H01L35/14
摘要： A transparent conducting oxide (TCO) film comprising: a TCO layer, and dopants selected from the elements consisting of Vanadium, Molybdenum, Tantalum, Niobium, Antimony, Titanium, Zirconium, and Hafnium, wherein the elements are n-type dopants; and wherein the transparent conducting oxide is characterized by an improved electron mobility of about 42 cm2/V-sec while simultaneously maintaining a high carrier density of ˜4.4e×1020 cm−3.
摘要翻译： 一种透明导电氧化物（TCO）膜，包括：TCO层和选自钒，钼，钽，铌，锑，钛，锆和铪的元素的掺杂剂，其中元素是n型掺杂剂; 并且其中所述透明导电氧化物的特征在于电子迁移率改善为约42cm 2 / V-sec，同时保持高达-4.4e×1020cm-3的载流子密度。
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公开(公告)号：US20100171082A1
公开(公告)日：2010-07-08
申请号：US12441707
申请日：2008-03-17
摘要： A transparent conducting oxide (TCO) film comprising: a TCO layer, and dopants selected from the elements consisting of Vanadium, Molybdenum, Tantalum, Niobium, Antimony, Titanium, Zirconium, and Hafnium, wherein the elements are n-type dopants; and wherein the transparent conducting oxide is characterized by an improved electron mobility of about 42 cm2/V-sec while simultaneously maintaining a high carrier density of ˜4.4e×1020 cm−3.
摘要翻译： 一种透明导电氧化物（TCO）膜，包括：TCO层和选自钒，钼，钽，铌，锑，钛，锆和铪的元素的掺杂剂，其中元素是n型掺杂剂; 并且其中所述透明导电氧化物的特征在于电子迁移率改善为约42cm 2 / V-sec，同时保持高达-4.4e×1020cm-3的载流子密度。
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公开(公告)号：US20140134786A1
公开(公告)日：2014-05-15
申请号：US14127261
申请日：2012-06-20
申请人： Timothy A. Gessert , Rommel Noufi , Ramesh G. Dhere , David S. Albin , Teresa Barnes , James Burst , Joel N. Duenow , Matthew Reese
发明人： Timothy A. Gessert , Rommel Noufi , Ramesh G. Dhere , David S. Albin , Teresa Barnes , James Burst , Joel N. Duenow , Matthew Reese
IPC分类号： H01L31/18
CPC分类号： H01L31/1828 , H01L21/0237 , H01L21/02474 , H01L21/02562 , H01L21/02576 , H01L21/02579 , H01L21/02581 , H01L21/02595 , H01L21/0262 , H01L21/02628 , H01L21/02631 , H01L21/02664 , H01L31/0296 , H01L31/073 , H01L31/1836 , Y02E10/543
摘要： A method of producing polycrystalline CdTe materials and devices that incorporate the polycrystalline CdTe materials are provided. In particular, a method of producing polycrystalline p-doped CdTe thin films for use in CdTe solar cells in which the CdTe thin films possess enhanced acceptor densities and minority carrier lifetimes, resulting in enhanced efficiency of the solar cells containing the CdTe material are provided.
摘要翻译： 提供了一种生产多晶CdTe材料的方法和掺入多晶CdTe材料的器件。 特别地，提供了一种用于CdTe太阳能电池中的多晶p掺杂CdTe薄膜的方法，其中CdTe薄膜具有增强的受主密度和少数载流子寿命，从而提高了含有CdTe材料的太阳能电池的效率。
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公开(公告)号：US09147793B2
公开(公告)日：2015-09-29
申请号：US14127261
申请日：2012-06-20
申请人： Timothy A. Gessert , Rommel Noufi , Ramesh G. Dhere , David S. Albin , Teresa Barnes , James Burst , Joel N. Duenow , Matthew Reese
发明人： Timothy A. Gessert , Rommel Noufi , Ramesh G. Dhere , David S. Albin , Teresa Barnes , James Burst , Joel N. Duenow , Matthew Reese
IPC分类号： H01L31/18 , H01L31/073
CPC分类号： H01L31/1828 , H01L21/0237 , H01L21/02474 , H01L21/02562 , H01L21/02576 , H01L21/02579 , H01L21/02581 , H01L21/02595 , H01L21/0262 , H01L21/02628 , H01L21/02631 , H01L21/02664 , H01L31/0296 , H01L31/073 , H01L31/1836 , Y02E10/543
摘要： A method of producing polycrystalline CdTe materials and devices that incorporate the polycrystalline CdTe materials are provided. In particular, a method of producing polycrystalline p-doped CdTe thin films for use in CdTe solar cells in which the CdTe thin films possess enhanced acceptor densities and minority carrier lifetimes, resulting in enhanced efficiency of the solar cells containing the CdTe material are provided.
摘要翻译： 提供了一种生产多晶CdTe材料的方法和掺入多晶CdTe材料的器件。 特别地，提供了一种用于CdTe太阳能电池中的多晶p掺杂CdTe薄膜的方法，其中CdTe薄膜具有增强的受主密度和少数载流子寿命，从而提高了含有CdTe材料的太阳能电池的效率。
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5.发明申请Method for Producing High Carrier Concentration P-Type Transparent Conducting Oxides 失效生产高载体浓度P型透明导电氧化物的方法公开(公告)号：US20080118777A1
公开(公告)日：2008-05-22
申请号：US10553245
申请日：2002-04-02
申请人： Xiaonan Li , Yanfa Yan , Timothy J. Coutts , Timothy A. Gessert , Clay M. Dehart
发明人： Xiaonan Li , Yanfa Yan , Timothy J. Coutts , Timothy A. Gessert , Clay M. Dehart
IPC分类号： H01L21/00
CPC分类号： C23C16/407 , H01L21/02554 , H01L21/02565 , H01L21/02579 , H01L21/0262
摘要： A method for producing transparent p-type conducting oxide films without co-doping plasma enhancement or high temperature comprising: a) introducing a dialkyl metal at ambient temperature and a saturated pressure in a carrier gas into a low pressure deposition chamber, and b) introducing NO alone or with an oxidizer into the chamber under an environment sufficient to produce a metal-rich condition to enable NO decomposition and atomic nitrogen incorporation into the formed transparent metal conducting oxide.
摘要翻译： 一种用于生产没有共掺杂等离子体增强或高温的透明p型导电氧化物膜的方法，包括：a）将环境温度下的二烷基金属和载气中的饱和压力引入低压沉积室，以及b）引入 在单独的氧化剂或氧化剂中，在足以产生富含金属的条件以使得NO分解和原子氮结合到所形成的透明金属导电氧化物中的环境中。
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公开(公告)号：US08747630B2
公开(公告)日：2014-06-10
申请号：US12130788
申请日：2008-05-30
CPC分类号： C23C14/3414 , C23C14/0036 , C23C14/086
摘要： Transparent conducting oxides and production thereof are disclosed. An exemplary method of producing a transparent conducting oxide (TCO) material may comprise: providing a TCO target doped with either a high-permittivity oxide or a low-permittivity oxide in a process chamber. The method may also comprise depositing a metal oxide on the target in the process chamber to form a thin film having enhanced optical properties without substantially decreasing electrical quality.
摘要翻译： 公开了透明导电氧化物及其生产。 制造透明导电氧化物（TCO）材料的示例性方法可以包括：在处理室中提供掺杂有高介电常数氧化物或低介电常数氧化物的TCO靶。 该方法还可以包括在处理室中的靶上沉积金属氧化物以形成具有增强的光学特性而不显着降低电气质量的薄膜。
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7.发明授权Method for producing high carrier concentration p-Type transparent conducting oxides 失效高载体浓度p型透明导电氧化物的制备方法公开(公告)号：US07517784B2
公开(公告)日：2009-04-14
申请号：US10553245
申请日：2002-04-02
申请人： Xiaonan Li , Yanfa Yan , Timothy J. Coutts , Timothy A. Gessert , Clay M. Dehart
发明人： Xiaonan Li , Yanfa Yan , Timothy J. Coutts , Timothy A. Gessert , Clay M. Dehart
IPC分类号： H01L21/44
CPC分类号： C23C16/407 , H01L21/02554 , H01L21/02565 , H01L21/02579 , H01L21/0262
摘要： A method for producing transparent p-type conducting oxide films without co-doping plasma enhancement or high temperature comprising: a) introducing a dialkyl metal at ambient temperature and a saturated pressure in a carrier gas into a low pressure deposition chamber, and b) introducing NO alone or with an oxidizer into the chamber under an environment sufficient to produce a metal-rich condition to enable NO decomposition and atomic nitrogen incorporation into the formed transparent metal conducting oxide.
摘要翻译： 一种用于生产没有共掺杂等离子体增强或高温的透明p型导电氧化物膜的方法，包括：a）将环境温度下的二烷基金属和载气中的饱和压力引入低压沉积室，以及b）引入 在单独的氧化剂或氧化剂中，在足以产生富含金属的条件以使得NO分解和原子氮结合到所形成的透明金属导电氧化物中的环境中。
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公开(公告)号：US08734621B2
公开(公告)日：2014-05-27
申请号：US11718628
申请日：2007-01-16
CPC分类号： H01L31/1884 , C23C14/086 , C23C14/3414 , H01B1/08 , H01L21/02554 , H01L21/02565 , H01L21/02573 , H01L21/02631 , Y02E10/50
摘要： Transparent conducting oxides and production thereof are disclosed. An exemplary method of producing a transparent conducting oxide (TCO) material may comprise: providing a TCO target (110) doped with either a high-permittivity oxide or a low-permittivity oxide in a process chamber (100). The method may also comprise depositing a metal oxide on the target (110) to form a thin film having enhanced optical properties without substantially decreasing electrical quality.
摘要翻译： 公开了透明导电氧化物及其生产。 制造透明导电氧化物（TCO）材料的示例性方法可以包括：提供在处理室（100）中掺杂有高介电常数氧化物或低介电常数氧化物的TCO靶（110）。 该方法还可以包括在靶（110）上沉积金属氧化物以形成具有增强的光学特性而不显着降低电气质量的薄膜。
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公开(公告)号：US20110084239A1
公开(公告)日：2011-04-14
申请号：US11718628
申请日：2007-01-16
CPC分类号： H01L31/1884 , C23C14/086 , C23C14/3414 , H01B1/08 , H01L21/02554 , H01L21/02565 , H01L21/02573 , H01L21/02631 , Y02E10/50
摘要： Transparent conducting oxides and production thereof are disclosed. An exemplary method of producing a transparent conducting oxide (TCO) material may comprise: providing a TCO target (110) doped with either a high-permittivity oxide or a low-permittivity oxide in a process chamber (100). The method may also comprise depositing a metal oxide on the target (110) to form a thin film having enhanced optical properties without substantially decreasing electrical quality.
摘要翻译： 公开了透明导电氧化物及其生产。 制造透明导电氧化物（TCO）材料的示例性方法可以包括：提供在处理室（100）中掺杂有高介电常数氧化物或低介电常数氧化物的TCO靶（110）。 该方法还可以包括在靶（110）上沉积金属氧化物以形成具有增强的光学特性而不显着降低电气质量的薄膜。
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公开(公告)号：US06458254B2
公开(公告)日：2002-10-01
申请号：US08937718
申请日：1997-09-25
申请人： Timothy A. Gessert
发明人： Timothy A. Gessert
IPC分类号： H01L21461
CPC分类号： H01L31/073 , H01J37/32174 , H01J2237/3341 , H01L21/465 , H01L31/022425 , H01L31/1828 , Y02E10/543 , Y02P70/521
摘要： A method of making a low-resistance electrical contact between a metal and a layer of p-type CdTe surface by plasma etching and reactive ion etching comprising: a) placing a CdS/CdTe layer into a chamber and evacuating said chamber; b) backfilling the chamber with Argon or a reactive gas to a pressure sufficient for plasma ignition; and c) generating plasma ignition by energizing a cathode which is connected to a power supply to enable the plasma to interact argon ions alone or in the presence of a radio-frequency DC self-bias voltage with the p-CdTe surface.
摘要翻译： 一种通过等离子体蚀刻和反应离子蚀刻在金属和p型CdTe表面层之间进行低电阻电接触的方法，包括：a）将CdS / CdTe层放入室中并抽空所述室; b）回填 具有氩气的室或反应气体至足以进行等离子体点火的压力; 和c）通过激励连接到电源的阴极来产生等离子体点火，以使等离子体能够单独地或者在存在射频DC自偏压与p-CdTe表面的情况下相互作用氩离子。
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