发明申请
US20100175621A1 Microwave Plasma Processing Apparatus 审中-公开
微波等离子体处理设备

  • 专利标题: Microwave Plasma Processing Apparatus
  • 专利标题(中): 微波等离子体处理设备
  • 申请号: US12223253
    申请日: 2007-01-31
  • 公开(公告)号: US20100175621A1
    公开(公告)日: 2010-07-15
  • 发明人: Koichi YamazakiMasaki Sano
  • 申请人: Koichi YamazakiMasaki Sano
  • 优先权: JP2006-023282 20060131
  • 国际申请: PCT/JP2007/051624 WO 20070131
  • 主分类号: C23C16/513
  • IPC分类号: C23C16/513 B32B3/00
Microwave Plasma Processing Apparatus
摘要:
Disclosed is improvement of a quartz-glass top plate to be used as a microwave-transmitting window in a microwave plasma processing apparatus. The surface, facing a substrate W, of the top plate has surface roughness equal to or less than 0.2 μm in arithmetic mean surface roughness Ra. Thereby, generation of particles derived from the quartz glass material constituting the top plate is minimized, even when the top plate is exposed to a severe environment of high electron density and high electron temperature.
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