发明申请
US20100176399A1 BACK-CHANNEL-ETCH TYPE THIN-FILM TRANSISTOR, SEMICONDUCTOR DEVICE AND MANUFACTURING METHODS THEREOF
审中-公开
后通道蚀刻型薄膜晶体管，半导体器件及其制造方法
- 专利标题： BACK-CHANNEL-ETCH TYPE THIN-FILM TRANSISTOR, SEMICONDUCTOR DEVICE AND MANUFACTURING METHODS THEREOF
- 专利标题（中）： 后通道蚀刻型薄膜晶体管，半导体器件及其制造方法
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申请号： US12684338申请日： 2010-01-08
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公开(公告)号： US20100176399A1公开(公告)日： 2010-07-15
- 发明人: Toru TAKEGUCHI
- 申请人： Toru TAKEGUCHI
- 申请人地址： JP Chiyoda-ku
- 专利权人： MITSUBISHI ELECTRIC CORPORATION
- 当前专利权人： MITSUBISHI ELECTRIC CORPORATION
- 当前专利权人地址： JP Chiyoda-ku
- 优先权： JP2009-005600 20090114
- 主分类号： H01L29/786
- IPC分类号： H01L29/786 ; H01L21/20 ; H01L21/336
摘要：
A back-channel-etch type TFT includes a gate electrode, an SiN film that is formed on the gate electrode, and an SiO film that is formed and patterned on the SiN film. The TFT further includes an polycrystalline semiconductor film that is formed and patterned on the SiO film in contact with the SiO film in such a way that all pattern ends of the polycrystalline semiconductor film are located in close proximity to pattern ends of the SiO film.
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