发明申请
- 专利标题： MRAM with storage layer and super-paramagnetic sensing layer
- 专利标题（中）： MRAM与存储层和超顺磁感应层
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申请号： US12661345申请日： 2010-03-16
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公开(公告)号： US20100176429A1公开(公告)日： 2010-07-15
- 发明人: Po-Kang Wang , Yimin Guo , Cheng T. Horng , Tai Min , Ru-Ying Tong
- 申请人： Po-Kang Wang , Yimin Guo , Cheng T. Horng , Tai Min , Ru-Ying Tong
- 专利权人： MagIC Technologies, Inc.
- 当前专利权人： MagIC Technologies, Inc.
- 主分类号： H01L29/94
- IPC分类号： H01L29/94
摘要：
An MRAM is disclosed that has a MTJ comprised of a ferromagnetic layer with a magnetization direction along a first axis, a super-paramagnetic (SP) free layer, and an insulating layer formed therebetween. The SP free layer has a remnant magnetization that is substantially zero in the absence of an external field, and in which magnetization is roughly proportional to an external field until reaching a saturation value. In one embodiment, a separate storage layer is formed above, below, or adjacent to the MTJ and has uniaxial anisotropy with a magnetization direction along its easy axis which parallels the first axis. In a second embodiment, the storage layer is formed on a non-magnetic conducting spacer layer within the MTJ and is patterned simultaneously with the MTJ. The SP free layer may be multiple layers or laminated layers of CoFeB. The storage layer may have a SyAP configuration and a laminated structure.
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