发明申请
- 专利标题: Apparatus And Method For Manufacturing Trichlorosilane And Method For Manufacturing Polycrystalline Silicon
- 专利标题(中): 用于制造三氯硅烷的装置和方法及制造多晶硅的方法
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申请号: US12451666申请日: 2008-05-23
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公开(公告)号: US20100178230A1公开(公告)日: 2010-07-15
- 发明人: Wataru Saika , Kazuki Mizushima , Makoto Urushihara
- 申请人: Wataru Saika , Kazuki Mizushima , Makoto Urushihara
- 申请人地址: JP Tokyo
- 专利权人: Mitsubishi Materials Corporation
- 当前专利权人: Mitsubishi Materials Corporation
- 当前专利权人地址: JP Tokyo
- 优先权: JP20071391110 20070525; JP2008127143 20080514
- 国际申请: PCT/JP2008/059544 WO 20080523
- 主分类号: C01B33/107
- IPC分类号: C01B33/107 ; B01J8/00
摘要:
A method of manufacturing trichlorosilane includes a conversion reaction process (first reaction process) for producing a first reaction product gas, which contains trichlorosilane, dichlorosilylene, hydrogen chloride, and high-order silane compounds, by performing a conversion reaction of silicon tetrachloride and hydrogen, which are raw materials, in a first temperature range that is equal to or higher than 1000° C. and equal to or lower than 1900° C.; a first cooling process for cooling the first reaction product gas to a temperature of 950° C. or lower within 1 sec (except that the first reaction product gas is cooled to a temperature lower than 600° C. within 0.01 sec); a second reaction process for maintaining the temperature of the first reaction product gas in a second temperature range, which is equal to or higher than 600° C. and equal to or lower than 950° C., during the time that is equal to or more than 0.01 sec and equal to or less than 5 sec; and a second cooling process for cooling a second reaction product gas, which has been subjected to the second reaction process, to a temperature lower than 600° C.
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