公开(公告)号：US08372346B2

公开(公告)日：2013-02-12

申请号：US13047214

申请日：2011-03-14

申请人： Kazuki Mizushima ,  Wataru Saiki ,  Naoya Murakami ,  Masami Miyake

发明人： Kazuki Mizushima ,  Wataru Saiki ,  Naoya Murakami ,  Masami Miyake

IPC分类号： B01J19/00 ,  C01B33/08

CPC分类号： B01J19/243 ,  B01J2219/00135 ,  B01J2219/00155 ,  B01J2219/1928 ,  C01B33/1071

摘要： In an apparatus for producing trichlorosilane, an internal space of a reaction chamber is partitioned in a radial direction by first walls running along a circumferential direction, and is partitioned into multiple spaces by second walls which extend in a direction crossing the circumferential direction. Upper portions or lower portions of the first walls and the second walls are formed with a communicating portion which circulates a raw material gas to be introduced, toward a central portion of a reaction chamber while the raw material gas goes through the small spaces sequentially and is turned up and down, heaters are installed in the small spaces, one of small spaces on both sides of the second walls is used as a small space for a upward flow passage, and the other is used as a small space for a downward flow passage, and the small spaces communicate with each other via the communication portion of the second walls.

摘要翻译： 在三氯硅烷的制造装置中，反应室的内部空间沿着圆周方向的第一壁在径向上分隔开，并且沿与圆周方向交叉的方向延伸的第二壁分隔成多个空间。 第一壁和第二壁的上部或下部形成有将原料气体引入循环的连通部，朝向反应室的中心部分，同时原料气体依次通过小空间，并且是 上下放置，加热器安装在小空间中，第二壁两侧的小空间之一用作向上流动通道的小空间，另一个用作向下流动通道的小空间 并且小空间经由第二壁的连通部彼此连通。

公开(公告)号：US20110052914A1

公开(公告)日：2011-03-03

申请号：US12805926

申请日：2010-08-25

申请人： Makoto Urushihara ,  Kazuki Mizushima

发明人： Makoto Urushihara ,  Kazuki Mizushima

IPC分类号： B32B9/00 ,  H05B6/02 ,  B05C11/00 ,  B05C21/00

CPC分类号： C23C16/52 ,  C01B33/035 ,  C23C16/24 ,  C23C16/45557 ,  C23C16/4587 ,  C23C16/46 ,  Y10T428/2964

摘要： A polycrystalline silicon producing method with preventing meltdown and maintaining a high growing rate and a high yield by increasing temperature of raw material gas before supplying them to a reactor in a high pressure state so as to lower convection heat transfer from a silicon rod, including: supplying electric current to a silicon seed rod in a reactor to make the silicon seed rod to generate heat; and supplying a large amount of preheated raw material gas including chlorosilanes to the silicon seed rod in the reactor in the high pressure state.

摘要翻译： 一种多晶硅制造方法，其特征在于，在将原料气体供给到高压状态的反应器之前，通过增加原料气体的温度，防止熔融，保持高生长速度和高产率，从而降低从硅棒的对流传热，包括： 向反应器中的硅籽晶棒提供电流以使硅籽晶棒产生热量; 在高压状态下向反应器中的硅籽晶棒供给大量含有氯硅烷的预热原料气体。

公开(公告)号：US20090324477A1

公开(公告)日：2009-12-31

申请号：US12309627

申请日：2007-10-26

申请人： Kazuki Mizushima ,  Makoto Urushihara

发明人： Kazuki Mizushima ,  Makoto Urushihara

IPC分类号： C01B33/107 ,  F28D21/00 ,  F28D5/00

CPC分类号： C01B33/1071

摘要： An apparatus comprising: a reaction chamber 2 into which silicon tetrachloride and hydrogen is introduced for producing a reaction product gas containing trichlorosilane and hydrogen chloride by a reductive reaction at a temperature of not lower than 800° C.; a reaction product gas discharging device 4 that discharges the reaction product gas in the reaction chamber 2 to the outside; a cooling gas introducing device 5 that mixes hydrogen, silicon tetrachloride, or hydrogen chloride in the reaction product gas being discharged by the reaction product gas discharging device 4 to cool the reaction product gas.

摘要翻译： 一种装置，包括：反应室2，其中引入四氯化硅和氢气，以在不低于800℃的温度下通过还原反应制备含有三氯硅烷和氯化氢的反应产物气体; 反应产物气体排出装置4，其将反应室2中的反应产物气体排出到外部; 在由反应产物气体排出装置4排出的反应产物气体中混合氢，四氯化硅或氯化氢的冷却气体导入装置5，以冷却反应产物气体。

公开(公告)号：US07056789B2

公开(公告)日：2006-06-06

申请号：US10487526

申请日：2002-08-23

申请人： Ichiro Shiono ,  Kazuki Mizushima ,  Kenji Yamaguchi

发明人： Ichiro Shiono ,  Kazuki Mizushima ,  Kenji Yamaguchi

IPC分类号： H01L21/336

CPC分类号： H01L29/165 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02502 ,  H01L21/02532 ,  H01L21/0262 ,  H01L29/1054 ,  H01L29/66916

摘要： The present invention relates to a semiconductor substrate production method, field effect transistor production method, semiconductor substrate and field effect transistor which, together with having low penetrating dislocation density and low surface roughness, prevent worsening of surface and interface roughness during heat treatment of a device production process and so forth. A production method of a semiconductor substrate W, in which SiGe layers 2 and 3 are formed on an Si substrate 1, is comprised of a heat treatment step in which heat treatment is performed either during or after the formation of the SiGe layers by epitaxial growth, at a temperature that exceeds the temperature of the epitaxial growth, and a polishing step in which irregularities in the surface formed during the heat treatment are removed by polishing following formation of the SiGe layers.

摘要翻译： 半导体衬底制造方法，场效应晶体管制造方法，半导体衬底和场效应晶体管本发明涉及一种具有低穿透位错密度和低表面粗糙度的半导体衬底和场效应晶体管，防止器件热处理期间的表面变差和界面粗糙度 生产过程等等。 在Si衬底1上形成SiGe层2和3的半导体衬底W的制造方法包括热处理步骤，其中通过外延生长在SiGe层形成期间或之后进行热处理 ，在超过外延生长温度的温度下，以及抛光步骤，其中通过在形成SiGe层之后通过研磨去除在热处理期间形成的表面的凹凸。

公开(公告)号：US08551580B2

公开(公告)日：2013-10-08

申请号：US12805926

申请日：2010-08-25

申请人： Makoto Urushihara ,  Kazuki Mizushima

发明人： Makoto Urushihara ,  Kazuki Mizushima

IPC分类号： C23C16/24

CPC分类号： C23C16/52 ,  C01B33/035 ,  C23C16/24 ,  C23C16/45557 ,  C23C16/4587 ,  C23C16/46 ,  Y10T428/2964

摘要： A polycrystalline silicon producing method with preventing meltdown and maintaining a high growing rate and a high yield by increasing temperature of raw material gas before supplying them to a reactor in a high pressure state so as to lower convection heat transfer from a silicon rod, including: supplying electric current to a silicon seed rod in a reactor to make the silicon seed rod to generate heat; and supplying a large amount of preheated raw material gas including chlorosilanes to the silicon seed rod in the reactor in the high pressure state.

摘要翻译： 一种多晶硅制造方法，其特征在于，在将原料气体供给到高压状态的反应器之前，通过增加原料气体的温度，防止熔融，保持高生长速度和高产率，从而降低从硅棒的对流传热，包括： 向反应器中的硅籽晶棒提供电流以使硅籽晶棒产生热量; 在高压状态下向反应器中的硅籽晶棒供给大量含有氯硅烷的预热原料气体。

公开(公告)号：US08507051B2

公开(公告)日：2013-08-13

申请号：US12805083

申请日：2010-07-12

申请人： Makoto Urushihara ,  Kazuki Mizushima

发明人： Makoto Urushihara ,  Kazuki Mizushima

IPC分类号： C23C16/24

CPC分类号： C23C16/46 ,  C01B33/02 ,  C01B33/035 ,  C23C16/24 ,  Y10T428/12 ,  Y10T428/2975

摘要： A polycrystalline silicon producing method includes: the first process and the second process. In the first process, a surface temperature is maintained at a predetermined range by adjusting the current value to the silicon seed rod, and the raw material gas is supplied while maintaining a supply amount of chlorosilanes per square millimeter of the surface of the rod in a predetermined range until a temperature of the center portion of the rod reaches a predetermined temperature lower than the melting point of the polycrystalline silicon, and in the second process, a previously determined current value is set corresponding to a rod diameter and the supply amount of the raw material gas per square millimeter of the surface of the rod is decreased to maintain the surface temperature and the temperature of the center portion of the rod at predetermined ranges, respectively.

摘要翻译： 多晶硅制造方法包括：第一工序和第二工序。 在第一种方法中，通过调节硅晶棒的电流值将表面温度保持在预定范围，并且在将棒的表面的每平方毫米的氯代硅烷的供给量保持在 直到杆的中心部分的温度达到比多晶硅的熔点低的预定温度，并且在第二过程中，预先确定的电流值对应于棒直径和 杆的表面每平方毫米的原料气体减少，以将棒的中心部分的表面温度和温度分别维持在预定范围。

公开(公告)号：US08168152B2

公开(公告)日：2012-05-01

申请号：US13095997

申请日：2011-04-28

申请人： Wataru Saiki ,  Kazuki Mizushima

发明人： Wataru Saiki ,  Kazuki Mizushima

IPC分类号： C01B33/107

CPC分类号： C01B33/107 ,  C01B33/03 ,  C01B33/1071 ,  C01B33/10778

摘要： The present invention relates to a method for producing trichlorosilane. In this method for producing trichlorosilane, first, silicon tetrachloride and hydrogen are subjected to a conversion reaction at a temperature of equal to or higher than 1000° C. and equal to or lower than 1900° C., to produce a reaction gas containing trichlorosilane, dichlorosilylene, hydrogen chloride and high-order silane compounds, and then the reaction gas discharged from the conversion furnace is cooled to 600° C. or higher within 0.01 seconds from the initiation of cooling and to 500° C. or lower within 2 seconds. Subsequently, the reaction gas is maintained in a temperature range of equal to or higher than 500° C. and equal to or lower than 950° C. for a time period of equal to or longer than 0.01 seconds and equal to or shorter than 5 seconds. The reaction gas is further cooled to below 500° C.

摘要翻译： 本发明涉及三氯硅烷的制造方法。 在这种三氯硅烷的制造方法中，首先，在等于或高于1000℃等于或低于1900℃的温度下对四氯化硅和氢进行转化反应，以产生含有三氯硅烷的反应气体 ，二氯二甲苯，氯化氢和高级硅烷化合物，然后从转化炉排出的反应气体在冷却开始后0.01秒内冷却至600℃以上，并在2秒内降至500℃以下 。 随后，将反应气体保持在等于或高于500℃且等于或低于950℃的温度范围等于或大于0.01秒且等于或小于5的时间 秒。 将反应气体进一步冷却至低于500℃

公开(公告)号：US20110200512A1

公开(公告)日：2011-08-18

申请号：US13095997

申请日：2011-04-28

申请人： Wataru Saiki ,  Kazuki Mizushima

发明人： Wataru Saiki ,  Kazuki Mizushima

IPC分类号： C01B33/107 ,  C01B33/021

CPC分类号： C01B33/107 ,  C01B33/03 ,  C01B33/1071 ,  C01B33/10778

摘要： The present invention relates to a method for producing trichlorosilane. In this method for producing trichlorosilane, first, silicon tetrachloride and hydrogen are subjected to a conversion reaction at a temperature of equal to or higher than 1000° C. and equal to or lower than 1900° C., to produce a reaction gas containing trichlorosilane, dichlorosilylene, hydrogen chloride and high-order silane compounds, and then the reaction gas discharged from the conversion furnace is cooled to 600° C. or higher within 0.01 seconds from the initiation of cooling and to 500° C. or lower within 2 seconds. Subsequently, the reaction gas is maintained in a temperature range of equal to or higher than 500° C. and equal to or lower than 950° C. for a time period of equal to or longer than 0.01 seconds and equal to or shorter than 5 seconds. The reaction gas is further cooled to below 500° C.

摘要翻译： 本发明涉及三氯硅烷的制造方法。 在这种三氯硅烷的制造方法中，首先，在等于或高于1000℃等于或低于1900℃的温度下对四氯化硅和氢气进行转化反应，生成含有三氯硅烷的反应气体 ，二氯二甲苯，氯化氢和高级硅烷化合物，然后从转化炉排出的反应气体在冷却开始后0.01秒内冷却至600℃以上，并在2秒内降至500℃以下 。 随后，将反应气体保持在等于或高于500℃且等于或低于950℃的温度范围等于或大于0.01秒且等于或小于5的时间 秒。 将反应气体进一步冷却至低于500℃

公开(公告)号：US20110014468A1

公开(公告)日：2011-01-20

申请号：US12805083

申请日：2010-07-12

申请人： Makoto Urushihara ,  Kazuki Mizushima

发明人： Makoto Urushihara ,  Kazuki Mizushima

IPC分类号： C01B33/02 ,  H05B6/02 ,  B05C11/10

CPC分类号： C23C16/46 ,  C01B33/02 ,  C01B33/035 ,  C23C16/24 ,  Y10T428/12 ,  Y10T428/2975

摘要： A polycrystalline silicon producing method includes: the first process and the second process. In the first process, a surface temperature is maintained at a predetermined range by adjusting the current value to the silicon seed rod, and the raw material gas is supplied while maintaining a supply amount of chlorosilanes per square millimeter of the surface of the rod in a predetermined range until a temperature of the center portion of the rod reaches a predetermined temperature lower than the melting point of the polycrystalline silicon, and in the second process, a previously determined current value is set corresponding to a rod diameter and the supply amount of the raw material gas per square millimeter of the surface of the rod is decreased to maintain the surface temperature and the temperature of the center portion of the rod at predetermined ranges, respectively.

摘要翻译： 多晶硅制造方法包括：第一工序和第二工序。 在第一种方法中，通过调节硅晶棒的电流值将表面温度保持在预定范围，并且在将棒的表面的每平方毫米的氯代硅烷的供给量保持在 直到杆的中心部分的温度达到比多晶硅的熔点低的预定温度，并且在第二过程中，预先确定的电流值对应于棒直径和 杆的表面每平方毫米的原料气体减少，以将棒的中心部分的表面温度和温度分别维持在预定范围。

公开(公告)号：US09994455B2

公开(公告)日：2018-06-12

申请号：US12451666

申请日：2008-05-23

申请人： Wataru Saiki ,  Kazuki Mizushima ,  Makoto Urushihara

发明人： Wataru Saiki ,  Kazuki Mizushima ,  Makoto Urushihara

IPC分类号： C01B33/107 ,  C01B33/027

CPC分类号： C01B33/1071 ,  C01B33/027

摘要： A method of manufacturing trichlorosilane includes a conversion reaction process (first reaction process) for producing a first reaction product gas, which contains trichlorosilane, dichlorosilylene, hydrogen chloride, and high-order silane compounds, by performing a conversion reaction of silicon tetrachloride and hydrogen, which are raw materials, in a first temperature range that is equal to or higher than 1000° C. and equal to or lower than 1900° C.; a first cooling process for cooling the first reaction product gas to a temperature of 950° C. or lower within 1 sec (except that the first reaction product gas is cooled to a temperature lower than 600° C. within 0.01 sec); a second reaction process for maintaining the temperature of the first reaction product gas in a second temperature range, which is equal to or higher than 600° C. and equal to or lower than 950° C., during the time that is equal to or more than 0.01 sec and equal to or less than 5 sec; and a second cooling process for cooling a second reaction product gas, which has been subjected to the second reaction process, to a temperature lower than 600° C.