发明申请
- 专利标题： METHOD FOR CHEMICAL MODIFICATION OF A GRAPHENE EDGE, GRAPHENE WITH A CHEMICALLY MODIFIED EDGE AND DEVICES INCLUDING THE GRAPHENE
- 专利标题（中）： 石墨边缘化学改性方法，具有化学修饰边缘的石墨和包括石墨的装置
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申请号： US12576061申请日： 2009-10-08
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公开(公告)号： US20100178464A1公开(公告)日： 2010-07-15
- 发明人: Won Mook CHOI , Byung Hee HONG , Jaeyoung CHOI
- 申请人： Won Mook CHOI , Byung Hee HONG , Jaeyoung CHOI
- 申请人地址： KR Suwon-si
- 专利权人： SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人： SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人地址： KR Suwon-si
- 优先权： KR10-2009-0003302 20090115
- 主分类号： B32B3/10
- IPC分类号： B32B3/10 ; B44C1/22
摘要：
A method for chemical modification of graphene includes dry etching graphene to provide an etched graphene; and introducing a functional group at an edge of the etched graphene. Also disclosed is graphene, including an etched edge portion, the etched portion including a functional group.
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