发明申请
- 专利标题： TUNNEL MAGNETORESISTIVE THIN FILM AND MAGNETIC MULTILAYER FILM FORMATION APPARATUS
- 专利标题（中）： 隧道磁阻薄膜和磁性多层膜成膜装置
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申请号： US12602831申请日： 2008-06-06
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公开(公告)号： US20100178528A1公开(公告)日： 2010-07-15
- 发明人: Koji Tsunekawa , Yoshinori Nagamine
- 申请人： Koji Tsunekawa , Yoshinori Nagamine
- 申请人地址： JP JP Kawasaki-shi
- 专利权人： CANON ANELVA CORPORATION
- 当前专利权人： CANON ANELVA CORPORATION
- 当前专利权人地址： JP JP Kawasaki-shi
- 优先权： JP2007-161325 20070619
- 国际申请： PCT/JP2008/060418 WO 20080606
- 主分类号： G11B5/39
- IPC分类号： G11B5/39
摘要：
A tunnel magnetoresistive thin film which can simultaneously realize a high MR ratio and low magnetostriction is provided.The tunnel magnetoresistive thin film comprises a magnetization fixed layer, a tunnel barrier layer, and a magnetization free layer, wherein the tunnel barrier layer is a magnesium oxide film containing magnesium oxide crystal grains and the magnetization free layer is a layered structure including a first magnetization free layer and a second magnetization free layer, the first magnetization free layer being made of alloy containing Co atoms, Fe atoms, and B atoms or containing Co atoms, Ni atoms, Fe atoms, and B atoms, having a body-centered cubic structure, and having (001) orientation, the second magnetization free layer being made of alloy containing Fe atoms and Ni atoms and having a face-centered cubic structure.
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