公开(公告)号：US20110253037A1

公开(公告)日：2011-10-20

申请号：US13093906

申请日：2011-04-26

Applicant: Koji Tsunekawa ,  Yoshinori Nagamine ,  Naoyuki Suzuki ,  Takuji Okada ,  Shinichi Inaba

Inventor： Koji Tsunekawa ,  Yoshinori Nagamine ,  Naoyuki Suzuki ,  Takuji Okada ,  Shinichi Inaba

IPC: F27D11/12 ,  H01L21/00 ,  B05C11/00 ,  C23C14/56 ,  B05C9/14

CPC classification number: H01L21/67109 ,  C23C14/541 ,  G11C11/16 ,  H01L21/67115 ,  H01L21/67748 ,  H01L21/68742

Abstract: The vacuum heating and cooling apparatus can rapidly heat and cool only the substrate after film-forming treatment while maintaining high vacuum. The temperature rise of members in the chamber with time caused by accumulation of heat is suppressed, and the variation of temperature between substrates is decreased. In an embodiment, the heating and cooling apparatus for heating and cooling a substrate in a vacuum, includes: a vacuum chamber; a radiation energy source positioned at the vacuum chamber on an atmosphere side for emitting a heating light; an incidence part for causing the heating light from the radiation energy source to enter the vacuum chamber; a substrate-holding member for holding the substrate; and a substrate-transfer mechanism for transferring the substrate held by the substrate-holding member in a heating state to a heating position proximal to the radiation energy source, and transferring the substrate and the substrate-holding member in a non-heating state to a non-heating position distant from the radiation energy source, wherein the substrate-holding member has a plate shape for placing the substrate thereon and has an outer shape larger than that of the incidence part for causing the heating light to enter the vacuum chamber.

Abstract translation: 真空加热和冷却装置可以在保持高真空度的情况下在成膜处理之后快速地加热和冷却基板。 由于积聚而导致室内部件的温度升高受到抑制，基板间的温度变化也降低。 在一个实施例中，用于在真空中加热和冷却基板的加热和冷却装置包括：真空室; 辐射能源，其位于气氛侧的真空室处，用于发射加热光; 用于使来自辐射能源的加热光进入真空室的入射部分; 用于保持所述基板的基板保持部件; 以及基板转印机构，用于将由基板保持部件保持的基板以加热状态转印到靠近所述辐射能量源的加热位置，并将所述基板和所述基板保持部件以非加热状态转印到 远离辐射能源的非加热位置，其中基板保持构件具有用于将基板放置在其上的板形状，并且具有比用于使加热光进入真空室的入射部分大的外形。

公开(公告)号：US20100316890A1

公开(公告)日：2010-12-16

申请号：US12759826

申请日：2010-04-14

Applicant: Young-suk CHOI ,  Koji TSUNEKAWA

Inventor： Young-suk CHOI ,  Koji TSUNEKAWA

IPC: G11B5/39

CPC classification number: G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3906 ,  G11C11/161 ,  H01L43/08 ,  Y10T428/1114

Abstract: On the substrate (101), there is formed at least a laminated structure composed of sandwiching a tunnel barrier layer (107) between magnetic pinned layers (105 and 106) each having multilayer structure and magnetic free layers (108, 109, and 110) each having multilayer structure. The magnetic pinned layer having multilayer structure, the tunnel barrier layer, and the magnetic free layer having multilayer structure are stacked in this order on the substrate. The magnetic free layer having multilayer structure has a sandwich structure holding an intermediate layer (109) between a first magnetic free layer (108) and a second magnetic free layer (110). The intermediate layer comprises any one of a single-layer metal nitride, a single-layer alloy, and a multilayer film obtained by stacking pluralities of films made of metal, metal nitride, or alloy. After the formation of the laminated structure, annealing treatment is applied thereto in a magnetic field, thus providing a specified magnetization to the MTJ device (100).

Abstract translation: 在基板（101）上形成至少一层叠结构，该叠层结构在每个具有多层结构的磁性固定层（105和106）和无磁性层（108,109和110）之间夹着隧道势垒层（107） 每个都具有多层结构。 具有多层结构的磁性被钉扎层，隧道势垒层和具有多层结构的磁性自由层依次层叠在基板上。 具有多层结构的无磁性层具有在第一磁性自由层（108）和第二无磁性层（110）之间保持中间层（109）的夹层结构。 中间层包括单层金属氮化物，单层合金和通过堆叠多个由金属，金属氮化物或合金制成的膜而获得的多层膜中的任一种。 在形成层叠结构之后，在磁场中对其进行退火处理，从而向MTJ装置（100）提供规定的磁化强度。

公开(公告)号：US07813088B2

公开(公告)日：2010-10-12

申请号：US11527532

申请日：2006-09-27

Applicant: Koji Tsunekawa ,  David D. Djayaprawira

Inventor： Koji Tsunekawa ,  David D. Djayaprawira

IPC: G11B5/127

CPC classification number: G01R33/093 ,  B82Y25/00 ,  G11B5/3906 ,  G11C11/161

Abstract: A magnetoresistance effect device has a fixed ferromagnetism layer, a free ferromagnetism layer, and a barrier layer sandwiched by these ferromagnetic layers. It is constituted so that CoFeB whose amount of addition of boron B (b: atomic %) is 21%≦b≦23% may be used for the free ferromagnetism layer. In the magnetic resistance effect element, a magnetostrictive constant does not change steeply near the magnetostrictive constant zero. A MR ratio is maintained to be high.

Abstract translation: 磁阻效应器件具有固定的铁磁层，自由铁磁层和被这些铁磁层夹在中间的阻挡层。 其构成为使得硼B（b：原子％）的添加量为21％＆lt; 1E; b＆nlE; 23％的CoFeB可用于游离铁磁层。 在磁阻效应元件中，磁致伸缩常数在磁致伸缩常数零点附近不会急剧变化。 MR比保持较高。

公开(公告)号：US20100080894A1

公开(公告)日：2010-04-01

申请号：US12551753

申请日：2009-09-01

Applicant: Koji Tsunekawa ,  Yoshinori Nagamine

Inventor： Koji Tsunekawa ,  Yoshinori Nagamine

IPC: B05D5/12

CPC classification number: H01L27/222 ,  B82Y25/00 ,  B82Y40/00 ,  G11C11/161 ,  H01F10/3272 ,  H01F10/3295 ,  H01F41/307 ,  H01L27/228 ,  H01L43/08 ,  H01L43/12

Abstract: The present invention provides a fabricating method of a magnetoresistive element having an MR ratio higher than a conventional MR ratio. In a step of depositing a magnetization fixed layer, a magnetization free layer, and a tunnel barrier layer on a substrate using a sputtering method in one embodiment of the present invention, the step of depositing the magnetization fixed layer deposits a ferromagnetic layer containing Co atoms, Fe atoms, and B atoms by a co-sputtering method using a first target containing Co atoms, Fe atoms and B atoms, and a second target having different B atom content from that of the first target.

Abstract translation: 本发明提供一种具有高于常规MR比的MR比的磁阻元件的制造方法。 在本发明的一个实施例中，使用溅射法在基板上沉积磁化固定层，磁化自由层和隧道势垒层的步骤中，沉积磁化固定层的步骤沉积含有Co原子的铁磁层 通过使用包含Co原子，Fe原子和B原子的第一靶的共溅射法，和与第一靶相同的B原子含量的第二靶，通过共溅射法。

公开(公告)号：US20090321246A1

公开(公告)日：2009-12-31

申请号：US12190864

申请日：2008-08-13

Applicant: Koji Tsunekawa ,  Yoshinori Nagamine ,  Kazumasa Nishimura ,  Franck Ernult

Inventor： Koji Tsunekawa ,  Yoshinori Nagamine ,  Kazumasa Nishimura ,  Franck Ernult

IPC: C23C14/34

CPC classification number: H01L43/12 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  C23C14/34 ,  C23C14/568 ,  C23C14/5853 ,  G11B5/3163 ,  G11B5/3906 ,  G11B5/3909 ,  H01F41/18 ,  H01F41/307 ,  H01L43/08

Abstract: A method and an apparatus of fabricating a tunnel magnetic resistive element which do not show much dispersion in RA and capable of obtaining a high MR ratio in a low RA are provided. The method of fabricating a tunnel magnetic resistive element includes a first ferromagnetic layer, a tunnel barrier layer made of metal oxide and a second ferromagnetic layer, wherein a step of making the tunnel barrier layer includes carrying out film formation of a first metal layer while doping oxygen on the first ferromagnetic layer, subsequently an oxidation process on the oxygen-doped first metal layer to make an oxide layer and film formation of a second metal layer on the oxide layer.

Abstract translation: 提供一种制造隧道磁阻元件的方法和装置，该隧道磁阻元件在RA中不显示很大的色散并且能够在低RA中获得高MR比。 制造隧道磁阻元件的方法包括第一铁磁层，由金属氧化物构成的隧道势垒层和第二铁磁层，其中制造隧道势垒层的步骤包括进行第一金属层的成膜，同时掺杂 氧，然后在氧掺杂的第一金属层上进行氧化处理以在氧化物层上形成氧化物层和第二金属层的膜形成。

公开(公告)号：US20090032056A1

公开(公告)日：2009-02-05

申请号：US12181881

申请日：2008-07-29

Applicant: Koji Tsunekawa

Inventor： Koji Tsunekawa

IPC: B08B7/00 ,  C23C16/56

CPC classification number: B08B7/0035 ,  B08B7/0042 ,  C23C14/564 ,  C23C14/588 ,  C23C16/4407 ,  C23C16/56

Abstract: A contaminant removing method of this invention has a step of emitting, in a vacuum, a directional beam to at least one of the lower surface edge and circumferential surface of a substrate to be processed having a thin film formed on its upper surface.

Abstract translation: 本发明的污染物去除方法具有在真空中将定向光束发射到在其上表面上形成有薄膜的待处理基板的下表面边缘和圆周表面中的至少一个的步骤。

公开(公告)号：US20080202917A1

公开(公告)日：2008-08-28

申请号：US12111861

申请日：2008-04-29

Applicant: David Djulianto DJAYAPRAWIRA ,  Koji TSUNEKAWA ,  Motonobu NAGAI

Inventor： David Djulianto DJAYAPRAWIRA ,  Koji TSUNEKAWA ,  Motonobu NAGAI

IPC: C23C14/34

CPC classification number: B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G11B5/39 ,  G11C11/16 ,  H01F10/30 ,  H01F10/3254 ,  H01F10/3268 ,  H01F41/18 ,  H01F41/302 ,  H01L43/12 ,  Y10T29/49025 ,  Y10T29/49032 ,  Y10T29/49034 ,  Y10T29/49043 ,  Y10T29/49044

Abstract: This application discloses a method and apparatus for manufacturing a magnetoresistive multilayer film having a structure where an antiferromagnetic layer, a pinned-magnetization layer, a nonmagnetic spacer layer and a free-magnetization layer are laminated on a substrate in this order. A film for the antiferromagnetic layer is deposited by sputtering as oxygen gas is added to a gas for the sputtering. A film for an extra layer interposed between the substrate and the antiferromagnetic layer is deposited by sputtering as oxygen gas is added to a gas for the sputtering. The film for the antiferromagnetic layer is deposited by sputtering as a gas mixture of argon and another gas of larger atomic number than argon is used.

Abstract translation: 本申请公开了一种用于制造具有这样的结构的磁阻多层膜的方法和装置，其中反铁磁性层，钉扎磁化层，非磁性间隔层和自由磁化层依次层压在基板上。 用于溅射的气体中加入氧气，通过溅射沉积反铁磁层的膜。 当用于溅射的气体中加入氧气时，通过溅射沉积介于衬底和反铁磁性层之间的额外层的膜。 用于反铁磁层的膜通过溅射沉积为氩气的气体混合物，并且使用比氩气更大原子序数的另一种气体。

公开(公告)号：US09017535B2

公开(公告)日：2015-04-28

申请号：US12727316

申请日：2010-03-19

Applicant: Yoshinori Nagamine ,  Kanto Nakamura ,  Koji Tsunekawa

Inventor： Yoshinori Nagamine ,  Kanto Nakamura ,  Koji Tsunekawa

IPC: C23C14/00 ,  C25B9/00 ,  C25B11/00 ,  C25B13/00 ,  C23C16/00 ,  C23C14/50 ,  C23C16/458 ,  C23C14/35 ,  H01J37/34 ,  C23C14/08 ,  C23C14/22 ,  C23C14/34 ,  H01L43/12

CPC classification number: C23C14/50 ,  C23C14/081 ,  C23C14/225 ,  C23C14/345 ,  C23C14/3464 ,  C23C14/352 ,  C23C16/4586 ,  H01J37/3417 ,  H01J37/3438 ,  H01J37/3444 ,  H01L43/12

Abstract: Provided is a high-quality magnetoresistive thin film by using a method of controlling self bias of a high-frequency sputtering device. In order to control the self bias for the substrate by adjusting a substrate potential, the high-frequency sputtering device according to the present invention includes: a chamber; evacuation means for evacuating the inside of the chamber; gas introduction means for supplying a gas into the chamber; a substrate holder provided with a substrate mounting table; rotation drive means capable of rotating the substrate holder; a sputtering cathode provided with a target mounting table and arranged such that the surface of the target mounting table is non-parallel to the surface of the substrate mounting table; an electrode disposed inside the substrate holder; and a variable impedance mechanism electrically connected to the electrode, for adjusting the substrate potential on the substrate holder.

Abstract translation: 通过使用控制高频溅射装置的自偏压的方法，提供了高质量的磁阻薄膜。 为了通过调整衬底电位来控制衬底的自偏压，根据本发明的高频溅射器件包括：腔室; 用于抽空腔室内部的排气装置; 气体引入装置，用于将气体供应到所述腔室中; 衬底保持器，其设置有衬底安装台; 旋转驱动装置，能够使基板保持架旋转; 设置有目标安装台的溅射阴极，并且被配置为使得所述目标安装台的表面不平行于所述基板安装台的表面; 设置在所述衬底保持器内的电极; 以及电连接到电极的可变阻抗机构，用于调节衬底保持器上的衬底电位。

公开(公告)号：US08932438B2

公开(公告)日：2015-01-13

申请号：US12972823

申请日：2010-12-20

Applicant: Koji Tsunekawa ,  Hiroyuki Hosoya ,  Yoshinori Nagamine ,  Shinji Furukawa ,  Naoki Watanabe

Inventor： Koji Tsunekawa ,  Hiroyuki Hosoya ,  Yoshinori Nagamine ,  Shinji Furukawa ,  Naoki Watanabe

IPC: C23C14/34 ,  G11B5/39 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  C23C14/14 ,  C23C14/22 ,  G01R33/09 ,  H01F10/32 ,  H01F41/18 ,  H01F41/30 ,  H01L43/12 ,  G11B5/31

CPC classification number: G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  C23C14/14 ,  C23C14/225 ,  C23C14/3464 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3163 ,  G11B5/3903 ,  G11B2005/3996 ,  H01F10/325 ,  H01F10/3254 ,  H01F10/3272 ,  H01F41/18 ,  H01F41/302 ,  H01L43/12

Abstract: The magnetic anisotropy of a magnetic layer in a spin valve tunnel magnetoresistive element or giant magnetoresistive element is enhanced. Deposition of the magnetic layer is performed by making sputtering particles obliquely incident on a substrate from a certain incident direction at a certain incident angle.

Abstract translation: 自旋阀隧道磁阻元件或巨磁阻元件中的磁性层的磁各向异性增强。 通过使溅射粒子以一定的入射角从特定的入射方向倾斜入射到基板上来进行磁性层的沉积。

公开(公告)号：US08394649B2

公开(公告)日：2013-03-12

申请号：US11969049

申请日：2008-01-03

Applicant: David D. Djayaprawira ,  Koji Tsunekawa ,  Motonobu Nagai ,  Hiroki Maehara ,  Shinji Yamagata ,  Naoki Watanabe ,  Shinji Yuasa

Inventor： David D. Djayaprawira ,  Koji Tsunekawa ,  Motonobu Nagai ,  Hiroki Maehara ,  Shinji Yamagata ,  Naoki Watanabe ,  Shinji Yuasa

IPC: H01L21/00

CPC classification number: H01L43/12 ,  B82Y25/00 ,  B82Y40/00 ,  C23C14/081 ,  C23C14/34 ,  G11C11/16 ,  G11C11/161 ,  H01F10/3204 ,  H01F10/3254 ,  H01F41/18 ,  H01F41/307 ,  H01L43/08

Abstract: A magnetoresistance effect device including a multilayer structure having a pair of ferromagnetic layers and a barrier layer positioned between them, wherein at least one ferromagnetic layer has at least the part contacting the barrier layer made amorphous and the barrier layer is an MgO layer having a highly oriented texture structure.

Abstract translation: 一种磁电阻效应器件，包括具有一对铁磁层和位于它们之间的阻挡层的多层结构，其中至少一个铁磁层至少具有与阻挡层接触的部分为非晶形，阻挡层是具有高度磁化强度的MgO层 定向纹理结构。