Invention Application
- Patent Title: METHOD AND APPARATUS FOR FABRICATING SEMICONDUCTOR DEVICE
- Patent Title (中): 用于制造半导体器件的方法和装置
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Application No.: US12651673Application Date: 2010-01-04
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Publication No.: US20100178763A1Publication Date: 2010-07-15
- Inventor: Kenji NARITA , Yoshiharu Hidaka , Koji Utaka
- Applicant: Kenji NARITA , Yoshiharu Hidaka , Koji Utaka
- Priority: JP2009-005069 20090113
- Main IPC: H01L21/3205
- IPC: H01L21/3205 ; B05C11/00 ; B05C9/10
Abstract:
A method for fabricating a semiconductor device includes the steps of: (a) forming an alloy film containing a precious metal on a substrate having a semiconductor layer or on a conductive film formed on the substrate; (b) heat-treating the substrate to allow the precious metal to react with silicon forming a silicide film containing the precious metal on the substrate or the conductive film; (c) removing an unreacted portion of the alloy film with a first chemical solution after the step (b); (d) forming a silicon oxide film on the top surface of the silicide film including a portion underlying a residue of the precious metal by exposing the substrate to an oxidative atmosphere; and (e) dissolving the residue of the precious metal with a second chemical solution.
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