-
公开(公告)号:US20100178764A1
公开(公告)日:2010-07-15
申请号:US12686841
申请日:2010-01-13
申请人: Kenji NARITA , Yoshiharu Hidaka , Koji Utaka , Takao Yamaguchi , Itaru Kanno , Hirokazu Kurisu
发明人: Kenji NARITA , Yoshiharu Hidaka , Koji Utaka , Takao Yamaguchi , Itaru Kanno , Hirokazu Kurisu
IPC分类号: H01L21/3205
CPC分类号: H01L21/2855 , H01L21/02068 , H01L21/28518 , H01L29/665 , H01L29/6659 , H01L29/7833
摘要: A method for fabricating a semiconductor device, includes the steps of (a) forming a metal film containing a precious metal on a substrate having a semiconductor layer containing silicon or on a conductive film containing silicon formed on the substrate, (b) after step (a), heat-treating the substrate to allow the precious metal to react with silicon to form a silicide film containing the precious metal on the substrate or the conductive film, (c) after step (b), forming an oxide film on a portion of the silicide film underlying an unreacted portion of the precious metal using a first chemical solution, and (d) dissolving the unreacted portion of the precious metal using a second chemical solution.
摘要翻译: 一种制造半导体器件的方法,包括以下步骤:(a)在具有含硅的半导体层的基板上或在基板上形成含有硅的导电膜上形成含有贵金属的金属膜,(b)在步骤 a),对基材进行热处理以使贵金属与硅反应以在基材或导电膜上形成含有贵金属的硅化物膜,(c)在步骤(b)之后,在一部分上形成氧化膜 使用第一化学溶液在贵金属的未反应部分下面的硅化物膜,和(d)使用第二化学溶液溶解贵金属的未反应部分。
-
公开(公告)号:US20100144146A1
公开(公告)日:2010-06-10
申请号:US12627572
申请日:2009-11-30
申请人: Koji UTAKA , Yoshiharu HIDAKA , Kenji NARITA
发明人: Koji UTAKA , Yoshiharu HIDAKA , Kenji NARITA
IPC分类号: H01L21/30
CPC分类号: H01L21/32134 , H01L21/02068 , H01L21/0209 , H01L21/28052 , H01L21/28518 , H01L27/11507 , H01L28/55 , H01L28/65 , H01L29/40111 , H01L29/665 , H01L29/6684
摘要: The step a) of forming a noble metal film or a metal film containing a noble metal on a semiconductor substrate containing silicon or a conductive film containing silicon is performed, the step b) of forming a silicide film containing a noble metal on the semiconductor substrate or the conductive film is performed, after the step a), by performing thermal treatment to the semiconductor substrate, the step c) of activating unreacted part of the noble metal using a first chemical solution is performed after the step b), and the step d) of dissolving the unreacted part of the noble metal activated in the step c) is performed. The step d) is performed within 30 minutes or less after the step c).
摘要翻译: 执行在包含硅的半导体衬底或含有硅的导电膜上形成含有贵金属的贵金属膜或金属膜的步骤a),在半导体衬底上形成含有贵金属的硅化物膜的步骤b) 或者在步骤a)之后执行导电膜,通过对半导体衬底进行热处理,在步骤b)之后执行使用第一化学溶液活化未反应部分贵金属的步骤c),并且步骤 d)溶解步骤c)中活化的贵金属的未反应部分。 步骤d)在步骤c)之后的30分钟以内进行。
-
公开(公告)号:US5300558A
公开(公告)日:1994-04-05
申请号:US863715
申请日:1992-04-03
申请人: Masayoshi Kurisu , Koji Utaka , Hajime Inagaki , Suguru Tokita , Kazuyuki Miyamoto , Yukari Hattori , Noriyuki Murakoshi , Tsutomu Saito
发明人: Masayoshi Kurisu , Koji Utaka , Hajime Inagaki , Suguru Tokita , Kazuyuki Miyamoto , Yukari Hattori , Noriyuki Murakoshi , Tsutomu Saito
IPC分类号: C09D4/00 , G11B7/243 , G11B7/253 , G11B7/2533 , G11B7/254 , G11B7/2542 , G11B7/257 , G11B7/258 , G11B7/2585 , G11B11/105 , C08K5/04 , C08K5/05 , C08K5/32 , C08K5/52
CPC分类号: C09D4/00 , G11B11/10584 , G11B7/252 , G11B7/2542 , G11B2007/24306 , G11B2007/2571 , G11B2007/25713 , G11B7/2533 , G11B7/256 , G11B7/2585
摘要: A curable resin composition comprising:(A) a compound having at least one curable acrylic radical, methacrylic radical or vinyl radial, or a mixture thereof;(B) an organic solvent containing an alcoholic organic solvent with an amount of not less than 40% by weight;(C) a compound having at least one pentavalent P with phosphoryl bonding; and(D) a polymerization initiator whichwhen coated on the surface of molded inorganic or organic materials, the coating shows superiority in curing under atmosphere and the cured composition has excellent adhesion, surface hardness, resistance to scratch, resistance to abrasion, surface luster, transparency and antistatic property.
摘要翻译: 一种可固化树脂组合物,其包含:(A)具有至少一个可固化的丙烯酸基,甲基丙烯酰基或乙烯基的化合物或其混合物; (B)含有不少于40重量%的醇有机溶剂的有机溶剂; (C)具有磷酸键合的至少一种五价P的化合物; 和(D)聚合引发剂,当涂覆在无机或有机材料的表面上时,该涂层在气氛下显示出优异的固化性,并且固化组合物具有优异的粘附性,表面硬度,耐刮擦性,耐磨性,表面光泽, 透明度和抗静电性。
-
公开(公告)号:US20100178763A1
公开(公告)日:2010-07-15
申请号:US12651673
申请日:2010-01-04
申请人: Kenji NARITA , Yoshiharu Hidaka , Koji Utaka
发明人: Kenji NARITA , Yoshiharu Hidaka , Koji Utaka
IPC分类号: H01L21/3205 , B05C11/00 , B05C9/10
CPC分类号: H01L21/28518 , H01L21/02068 , H01L21/2855 , H01L29/665 , H01L29/6659 , H01L29/7833
摘要: A method for fabricating a semiconductor device includes the steps of: (a) forming an alloy film containing a precious metal on a substrate having a semiconductor layer or on a conductive film formed on the substrate; (b) heat-treating the substrate to allow the precious metal to react with silicon forming a silicide film containing the precious metal on the substrate or the conductive film; (c) removing an unreacted portion of the alloy film with a first chemical solution after the step (b); (d) forming a silicon oxide film on the top surface of the silicide film including a portion underlying a residue of the precious metal by exposing the substrate to an oxidative atmosphere; and (e) dissolving the residue of the precious metal with a second chemical solution.
摘要翻译: 一种制造半导体器件的方法包括以下步骤:(a)在具有半导体层的衬底上或在形成在衬底上的导电膜上形成含有贵金属的合金膜; (b)对所述基板进行热处理以使所述贵金属与在所述基板或所述导电膜上形成含有所述贵金属的硅化物膜的硅反应; (c)在步骤(b)之后用第一化学溶液除去合成膜的未反应部分; (d)通过将基板暴露于氧化气氛,在硅化物膜的顶表面上形成氧化硅膜,该氧化硅膜包括贵金属残留物下面的部分; 和(e)用第二种化学溶液溶解贵金属的残余物。
-
-
-