发明申请
- 专利标题: Epitaxial Structure Having Low Defect Density
- 专利标题(中): 具有低缺陷密度的外延结构
-
申请号: US12688005申请日: 2010-01-15
-
公开(公告)号: US20100181576A1公开(公告)日: 2010-07-22
- 发明人: Dong-Sing Wuu , Ray-Hua Horng , Shih-Ting Chen , Tshung-Han Tsai , Hsueh-Wei Wu
- 申请人: Dong-Sing Wuu , Ray-Hua Horng , Shih-Ting Chen , Tshung-Han Tsai , Hsueh-Wei Wu
- 优先权: TW098102240 20090121
- 主分类号: H01L29/20
- IPC分类号: H01L29/20
摘要:
An epitaxial structure having a low defect density includes: a base layer; a first epitaxial layer having a plurality of concentrated defect groups, and an epitaxial surface that has a plurality of first recesses corresponding in position to the concentrated defect groups, the sizes of the first recesses being close to each other; and a plurality of defect-termination blocks respectively and filling the first recesses and having polished surfaces. The defect-termination blocks are made of a material which is different in removal rate from that of the first epitaxial layer. The polished surfaces are substantially flush with the epitaxial surface so that the first epitaxial layer has a substantially planarized crystal growth surface
公开/授权文献
- US08022412B2 Epitaxial structure having low defect density 公开/授权日:2011-09-20
信息查询
IPC分类: