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    Epitaxial structure having low defect density
    1.
    发明授权
    Epitaxial structure having low defect density 有权
    具有低缺陷密度的外延结构

    公开(公告)号：US08022412B2

    公开(公告)日：2011-09-20

    申请号：US12688005

    申请日：2010-01-15

    申请人： Dong-Sing Wuu ,  Ray-Hua Horng ,  Shih-Ting Chen ,  Tshung-Han Tsai ,  Hsueh-Wei Wu

    发明人： Dong-Sing Wuu ,  Ray-Hua Horng ,  Shih-Ting Chen ,  Tshung-Han Tsai ,  Hsueh-Wei Wu

    IPC分类号： H01L29/20 ,  H01L29/15

    CPC分类号： H01L21/02658 ,  C30B25/183 ,  C30B25/186 ,  C30B29/403 ,  H01L21/0243 ,  H01L21/02494 ,  H01L21/02518 ,  H01L21/02642 ,  H01L21/02647

    摘要： An epitaxial structure having a low defect density includes: a base layer; a first epitaxial layer having a plurality of concentrated defect groups, and an epitaxial surface that has a plurality of first recesses corresponding in position to the concentrated defect groups, the sizes of the first recesses being close to each other; and a plurality of defect-termination blocks respectively and filling the first recesses and having polished surfaces. The defect-termination blocks are made of a material which is different in removal rate from that of the first epitaxial layer. The polished surfaces are substantially flush with the epitaxial surface so that the first epitaxial layer has a substantially planarized crystal growth surface

    摘要翻译： 具有低缺陷密度的外延结构包括：基层; 具有多个集中缺陷组的第一外延层和具有与所述集中缺陷组相对应的多个第一凹部的外延表面，所述第一凹部的尺寸彼此靠近; 和多个缺陷端接块，并填充第一凹部并具有抛光表面。 缺陷端接块由与第一外延层的去除速率不同的材料制成。 抛光表面基本上与外延表面齐平，使得第一外延层具有基本平坦化的晶体生长表面

    Method of Making an Epitaxial Structure Having Low Defect Density
    2.
    发明申请
    Method of Making an Epitaxial Structure Having Low Defect Density 审中-公开
    制造具有低缺陷密度的外延结构的方法

    公开(公告)号：US20100184279A1

    公开(公告)日：2010-07-22

    申请号：US12688090

    申请日：2010-01-15

    申请人： Dong-Sing Wuu ,  Ray-Hua Horng ,  Shih-Ting Chen ,  Tshung-Han Tsai ,  Hsueh-Wei Wu

    发明人： Dong-Sing Wuu ,  Ray-Hua Horng ,  Shih-Ting Chen ,  Tshung-Han Tsai ,  Hsueh-Wei Wu

    IPC分类号： H01L21/20

    CPC分类号： H01L21/0243 ,  H01L21/02439 ,  H01L21/02458 ,  H01L21/02494 ,  H01L21/02502 ,  H01L21/02518 ,  H01L21/02647 ,  H01L33/007

    摘要： A method of making an epitaxial structure includes: (a) forming laterally a first epitaxial layer on a base layer, the first epitaxial layer having an epitaxial surface; (b) etching the first epitaxial layer using a wet etching agent so that the epitaxial surface has a plurality of first recesses; (c) depositing on the first epitaxial layer a defect-termination layer; and (d) removing the defect-termination layer by a chemical mechanical polishing process, thereby forming a plurality of defect-termination blocks that respectively and fill the first recesses, wherein the defect-termination blocks have polished surfaces that are substantially flush with the epitaxial surface.

    摘要翻译： 制造外延结构的方法包括：（a）在基底层上横向形成第一外延层，所述第一外延层具有外延表面; （b）使用湿蚀刻剂蚀刻第一外延层，使得外延表面具有多个第一凹槽; （c）在所述第一外延层上沉积缺陷端接层; 和（d）通过化学机械抛光工艺去除缺陷终止层，从而形成分别填充第一凹部的多个缺陷端接块，其中缺陷端接块具有与外延基本齐平的抛光表面 表面。

    Epitaxial Structure Having Low Defect Density
    3.
    发明申请
    Epitaxial Structure Having Low Defect Density 有权
    具有低缺陷密度的外延结构

    公开(公告)号：US20100181576A1

    公开(公告)日：2010-07-22

    申请号：US12688005

    申请日：2010-01-15

    申请人： Dong-Sing Wuu ,  Ray-Hua Horng ,  Shih-Ting Chen ,  Tshung-Han Tsai ,  Hsueh-Wei Wu

    发明人： Dong-Sing Wuu ,  Ray-Hua Horng ,  Shih-Ting Chen ,  Tshung-Han Tsai ,  Hsueh-Wei Wu

    IPC分类号： H01L29/20

    CPC分类号： H01L21/02658 ,  C30B25/183 ,  C30B25/186 ,  C30B29/403 ,  H01L21/0243 ,  H01L21/02494 ,  H01L21/02518 ,  H01L21/02642 ,  H01L21/02647

    摘要： An epitaxial structure having a low defect density includes: a base layer; a first epitaxial layer having a plurality of concentrated defect groups, and an epitaxial surface that has a plurality of first recesses corresponding in position to the concentrated defect groups, the sizes of the first recesses being close to each other; and a plurality of defect-termination blocks respectively and filling the first recesses and having polished surfaces. The defect-termination blocks are made of a material which is different in removal rate from that of the first epitaxial layer. The polished surfaces are substantially flush with the epitaxial surface so that the first epitaxial layer has a substantially planarized crystal growth surface

    摘要翻译： 具有低缺陷密度的外延结构包括：基层; 具有多个集中缺陷组的第一外延层和具有与所述集中缺陷组相对应的多个第一凹部的外延表面，所述第一凹部的尺寸彼此靠近; 和多个缺陷端接块，并填充第一凹部并具有抛光表面。 缺陷端接块由与第一外延层的去除速率不同的材料制成。 抛光表面基本上与外延表面齐平，使得第一外延层具有基本平坦化的晶体生长表面

    Light-emitting diode chip with high light extraction and method for manufacturing the same
    4.
    发明授权
    Light-emitting diode chip with high light extraction and method for manufacturing the same 有权
    具有高光提取的发光二极管芯片及其制造方法

    公开(公告)号：US08895332B2

    公开(公告)日：2014-11-25

    申请号：US12701336

    申请日：2010-02-05

    申请人： Ray-Hua Horng ,  Dong-Sing Wuu ,  Shao-Hua Huang ,  Chuang-Yu Hsieh ,  Chao-Kun Lin

    发明人： Ray-Hua Horng ,  Dong-Sing Wuu ,  Shao-Hua Huang ,  Chuang-Yu Hsieh ,  Chao-Kun Lin

    IPC分类号： H01L21/00 ,  H01L33/00 ,  H01L33/22 ,  H01L33/44

    CPC分类号： H01L33/22 ,  H01L33/0079 ,  H01L33/44

    摘要： This invention provides a light-emitting diode chip with high light extraction, which includes a substrate, an epitaxial-layer structure for generating light by electric-optical effect, a transparent reflective layer sandwiched between the substrate and the epitaxial-layer structure, and a pair of electrodes for providing power supply to the epitaxial-layer structure. A bottom surface and top surface of the epitaxial-layer structure are roughened to have a roughness not less than 100 nm root mean square (rms). The light generated by the epitaxial-layer structure is hence effectively extracted out. A transparent reflective layer not more than 5 μm rms is formed as an interface between the substrate and the epitaxial-layer structure. The light toward the substrate is more effectively reflected upward. The light extraction and brightness are thus enhanced. Methods for manufacturing the light-emitting diode chip of the present invention are also provided.

    摘要翻译： 本发明提供一种具有高光提取的发光二极管芯片，其包括基板，通过电光效应产生光的外延层结构，夹在基板和外延层结构之间的透明反射层，以及 一对用于向外延层结构提供电源的电极。 外延层结构的底表面和顶表面被粗糙化以具有不小于100nm均方根（rms）的粗糙度。 因此外延层结构产生的光被有效地抽出。 形成不大于5μm的透明反射层作为衬底和外延层结构之间的界面。 朝向基板的光更有效地向上反射。 因此光提取和亮度增强。 还提供了用于制造本发明的发光二极管芯片的方法。

    Light emitting diode
    7.
    发明授权
    Light emitting diode 有权
    发光二极管

    公开(公告)号：US08624262B2

    公开(公告)日：2014-01-07

    申请号：US12903852

    申请日：2010-10-13

    申请人： Ray-Hua Horng ,  Dong-Sing Wuu

    发明人： Ray-Hua Horng ,  Dong-Sing Wuu

    IPC分类号： H01L29/15 ,  H01L31/0312 ,  H01L33/00

    CPC分类号： H01L33/22 ,  H01L33/0079

    摘要： A light emitting diode includes: an electrically conductive permanent substrate having a reflective top surface; an epitaxial film disposed on the reflective top surface of the permanent substrate and having an upper surface and a roughened lower surface that is opposite to the upper surface, the roughened lower surface having a roughness with a height of not less than 300 nm and a plurality of peaks which are in ohmic contact with the reflective top surface; an optical adhesive filled in a gap between the lower surface and the reflective top surface and connecting the epitaxial film to the permanent substrate; and a top electrode disposed on the upper surface and in ohmic contact with the epitaxial film.

    摘要翻译： 发光二极管包括：具有反射顶表面的导电永久性基板; 外延膜设置在永久性基板的反射上表面上，具有与上表面相对的上表面和粗糙化的下表面，粗糙化的下表面具有不小于300nm的高度的粗糙度和多个 与反射顶表面欧姆接触的峰; 填充在下表面和反射顶表面之间的间隙中并将外延膜连接到永久基板的光学粘合剂; 以及设置在上表面上并与外延膜欧姆接触的顶电极。

    Light emitting diode
    9.
    发明授权
    Light emitting diode 有权
    发光二极管

    公开(公告)号：US08076689B2

    公开(公告)日：2011-12-13

    申请号：US12540635

    申请日：2009-08-13

    申请人： Ray-Hua Horng ,  Dong-Sing Wuu

    发明人： Ray-Hua Horng ,  Dong-Sing Wuu

    IPC分类号： H01L33/00

    CPC分类号： H01L33/22 ,  H01L33/0079

    摘要： A light emitting diode includes an epitaxial layer, an electrode, electrically conductive members, a light incident layer, a light reflecting layer, an adhesive, and an electrically conductive permanent substrate. The epitaxial layer has first and second surfaces. The electrode is disposed on the second surface of the epitaxial layer. The electrically conductive members are formed on the first surface of the epitaxial layer and are spaced apart from each other. The light incident layer is formed on the first surface of the epitaxial layer at regions where none of the electrically conductive members are formed. The light reflecting layer is formed on the light incident layer and the electrically conductive members, and has indented parts and non-indented parts. The adhesive is disposed in the indented parts of the light reflecting layer. The permanent substrate is bonded to the light reflecting layer through the adhesive and through wafer bonding.

    摘要翻译： 发光二极管包括外延层，电极，导电构件，光入射层，光反射层，粘合剂和导电永久基板。 外延层具有第一和第二表面。 电极设置在外延层的第二表面上。 导电构件形成在外延层的第一表面上并且彼此间隔开。 在不形成导电构件的区域，在外延层的第一表面上形成光入射层。 光反射层形成在光入射层和导电构件上，并且具有凹入部分和非凹进部分。 粘合剂设置在光反射层的凹进部分中。 永久性基板通过粘合剂并通过晶片接合结合到光反射层。

    LIGHT EMITTING DIODE
    10.
    发明申请
    LIGHT EMITTING DIODE 有权
    发光二极管

    公开(公告)号：US20110024783A1

    公开(公告)日：2011-02-03

    申请号：US12903852

    申请日：2010-10-13

    申请人： Ray-Hua Horng ,  Dong-Sing Wuu

    发明人： Ray-Hua Horng ,  Dong-Sing Wuu

    IPC分类号： H01L33/60

    CPC分类号： H01L33/22 ,  H01L33/0079

    摘要： A light emitting diode includes: an electrically conductive permanent substrate having a reflective top surface; an epitaxial film disposed on the reflective top surface of the permanent substrate and having an upper surface and a roughened lower surface that is opposite to the upper surface, the roughened lower surface having a roughness with a height of not less than 300 nm and a plurality of peaks which are in ohmic contact with the reflective top surface; an optical adhesive filled in a gap between the lower surface and the reflective top surface and connecting the epitaxial film to the permanent substrate; and a top electrode disposed on the upper surface and in ohmic contact with the epitaxial film.

    摘要翻译： 发光二极管包括：具有反射顶表面的导电永久性基板; 外延膜设置在永久性基板的反射上表面上，具有与上表面相对的上表面和粗糙化的下表面，粗糙化的下表面具有不小于300nm的高度的粗糙度和多个 与反射顶表面欧姆接触的峰; 填充在下表面和反射顶表面之间的间隙中并将外延膜连接到永久基板的光学粘合剂; 以及设置在上表面上并与外延膜欧姆接触的顶电极。