发明申请
- 专利标题： SEMICONDUCTOR DEVICE
- 专利标题（中）： 半导体器件
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申请号： US12690714申请日： 2010-01-20
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公开(公告)号： US20100181640A1公开(公告)日： 2010-07-22
- 发明人: Tatsuya SHIROMOTO , Tetsuya Nitta , Shigeo Tokumitsu
- 申请人： Tatsuya SHIROMOTO , Tetsuya Nitta , Shigeo Tokumitsu
- 专利权人： RENESAS TECHNOLOGY CORP.
- 当前专利权人： RENESAS TECHNOLOGY CORP.
- 优先权： JP2009-010202 20090120
- 主分类号： H01L29/06
- IPC分类号： H01L29/06
摘要：
Provided is a semiconductor device about which the reliability thereof is certainly kept even when a void is generated in a buried film in its trench. A rectangular element formation region is formed in a silicon layer. A trench having a predetermined width is formed to surround the element formation region. A first TEOS film and a second TEOS film are buried in the trench. A protecting film is formed at an L-shaped intersection region of the trench.
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