发明申请
US20100183041A1 Semiconductor laser element and semiconductor laser device 失效
半导体激光元件和半导体激光器件

  • 专利标题: Semiconductor laser element and semiconductor laser device
  • 专利标题(中): 半导体激光元件和半导体激光器件
  • 申请号: US12657451
    申请日: 2010-01-21
  • 公开(公告)号: US20100183041A1
    公开(公告)日: 2010-07-22
  • 发明人: Daisuke Imanishi
  • 申请人: Daisuke Imanishi
  • 申请人地址: JP Tokyo
  • 专利权人: Sony Corporation
  • 当前专利权人: Sony Corporation
  • 当前专利权人地址: JP Tokyo
  • 优先权: JPP2009-011989 20090122
  • 主分类号: H01S5/32
  • IPC分类号: H01S5/32 H01S5/125
Semiconductor laser element and semiconductor laser device
摘要:
A semiconductor laser element is provided which includes a first semiconductor layer, an active layer having a current injection region, a second semiconductor layer, a third semiconductor layer, and an electrode for injecting a current into the active layer. In the semiconductor laser element, the first semiconductor layer, the active layer, the second semiconductor layer, and the third semiconductor layer are laminated in that order on a substrate, the first semiconductor layer has a current constriction layer which constricts the current injection region of the active layer, the third semiconductor layer is formed on an upper surface of the second semiconductor layer in a region corresponding to the current injection region of the active layer, and the electrode is formed on the upper surface of the second semiconductor layer in a region other than that of the third semiconductor layer.
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