发明申请
US20100183985A1 PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE 失效
生产半导体器件的工艺

  • 专利标题: PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE
  • 专利标题(中): 生产半导体器件的工艺
  • 申请号: US12602156
    申请日: 2008-06-17
  • 公开(公告)号: US20100183985A1
    公开(公告)日: 2010-07-22
  • 发明人: Toshio Banba
  • 申请人: Toshio Banba
  • 申请人地址: JP Tokyo
  • 专利权人: SUMITOMO BAKELITE CO., LTD.
  • 当前专利权人: SUMITOMO BAKELITE CO., LTD.
  • 当前专利权人地址: JP Tokyo
  • 优先权: JP2007-159671 20070618; JP2008-152020 20080610
  • 国际申请: PCT/JP2008/061385 WO 20080617
  • 主分类号: G03F7/20
  • IPC分类号: G03F7/20
PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE
摘要:
A process for producing a semiconductor device includes a circuit formation step of forming circuit wiring on a semiconductor wafer using a chemically-amplified resist, and a cured film formation step of forming a cured film that protects the circuit wiring after forming the circuit wiring, the cured film being formed of a cured material of a photosensitive resin composition that comprises an alkali-soluble resin having a polybenzoxazole structure or a polybenzoxazole precursor structure, a compound that generates an acid upon exposure to light, and a solvent. The photosensitive resin composition substantially does not contain N-methyl-2-pyrrolidone. The process can suppress a T-top phenomenon or the like that may occur when forming a circuit on a semiconductor wafer using a chemically-amplified resist in the production of semiconductor devices.
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