公开(公告)号：US20100239977A1

公开(公告)日：2010-09-23

申请号：US12669565

申请日：2008-08-08

申请人： Toshio Banba

发明人： Toshio Banba

IPC分类号： G03F7/004

CPC分类号： G03F7/0233 ,  G03F7/40

摘要： A positive-type photosensitive resin composition includes (A) a polyamide resin that includes a structural unit shown by the following formula (1) and a structural unit shown by the following formula (2), and (B) a photosensitive compound, the polyamide resin (A) having a weight average molecular weight (Mw) of 5000 to 80,000, and a cured film obtained by curing the positive-type photosensitive resin composition at 250° C. having a tensile modulus of elasticity of 2.0 to 4.0 GPa and a tensile elongation of 10 to 100%. According to the present invention, a positive-type photosensitive resin composition that can be cured at a low temperature and a highly reliable semiconductor device including a cured film of the positive-type photosensitive resin composition can be provided.

摘要翻译： 正型感光性树脂组合物包括（A）包含下式（1）所示的结构单元和下述式（2）所示的结构单元的聚酰胺树脂，（B）感光性化合物，聚酰胺 重均分子量（Mw）为5000〜80,000的树脂（A）和通过使正型感光性树脂组合物在250℃下固化而得到的固化膜，拉伸弹性模量为2.0〜4.0GPa， 拉伸伸长率为10〜100％。 根据本发明，可以提供能够在低温下固化的正型感光性树脂组合物和包含正型感光性树脂组合物的固化膜的高可靠性的半导体装置。

公开(公告)号：US06927013B2

公开(公告)日：2005-08-09

申请号：US10474831

申请日：2002-04-30

申请人： Toshio Banba ,  Hiroaki Makabe ,  Takashi Hirano

发明人： Toshio Banba ,  Hiroaki Makabe ,  Takashi Hirano

IPC分类号： G03F7/022 ,  G03F7/023 ,  G03F7/075 ,  G03F7/039

CPC分类号： G03F7/037 ,  G03F7/022 ,  G03F7/0233 ,  G03F7/0757

摘要： The present invention provides a positive-working photosensitive resin composition with high sensitivity that gives a pattern having a high resolution and a high film thickness retention rate. In other words, the present invention provides a positive-working photosensitive resin composition comprising 100 parts by weight of a polyamide and 1 to 50 parts by weight of a photosensitive material, that is, a 1,2-naphthoquinone-2-diazide-5-sulfonate ester compound or a 1,2-naphthoquinone-2-diazide-4-sulfonate ester compound of a phenol compound. In addition, the present invention provides a positive-working photosensitive resin composition comprising 100 parts by weight of a polyamide, 1 to 50 parts by weight of a photosensitive material, that is, a 1,2-naphthoquinone-2-diazide-5-sulfonate ester compound or a 1,2-naphthoquinone-2-diazide-4-sulfonate ester compound of a phenol compound and 1 to 30 parts by weight of a phenol compound. Furthermore, the present invention provides a semiconductor device manufactured by using said positive-working photosensitive resin composition.

摘要翻译： 本发明提供一种具有高灵敏度的正性感光性树脂组合物，其具有高分辨率和高膜厚保持率的图案。 换句话说，本发明提供一种正性感光性树脂组合物，其包含100重量份的聚酰胺和1至50重量份的感光材料，即1,2-萘醌-2-重氮化物-5 - 磺酸酯化合物或酚化合物的1,2-萘醌-2-重氮化物-4-磺酸酯化合物。 此外，本发明提供一种正性感光性树脂组合物，其包含100重量份的聚酰胺，1至50重量份的感光材料，即1,2-萘醌-2-重氮基-5- 磺酸酯化合物或酚化合物的1,2-萘醌-2-二叠氮-4-磺酸酯化合物和1〜30重量份苯酚化合物。 此外，本发明提供了通过使用所述正性感光性树脂组合物制造的半导体器件。

公开(公告)号：US5756260A

公开(公告)日：1998-05-26

申请号：US732836

申请日：1996-10-15

申请人： Nobuyuki Sashida ,  Toshio Banba ,  Naoshige Takeda ,  Mitsuhiro Yamamoto

发明人： Nobuyuki Sashida ,  Toshio Banba ,  Naoshige Takeda ,  Mitsuhiro Yamamoto

IPC分类号： G03F7/004 ,  G03F7/012 ,  G03F7/023 ,  G03F7/037 ,  G03F7/038 ,  H05K1/00 ,  G03C1/73

CPC分类号： G03F7/0233 ,  G03F7/0045 ,  G03F7/0125 ,  G03F7/037 ,  G03F7/0387 ,  H05K3/4676

摘要： By using a polyamic acid ester comprising the following structural units (1a), (1b) and (1c) as a photosensitive resin and a sulfonamide compound or a specific glycol ether acetate as a stabilizer, a photo-sensitive resin composition excellent especially in viscosity stability can be obtained, and by using the above photosensitive resin and a specific developer, a relief pattern of high resolution can be formed. ##STR1## (the symbols in the formulas are as defined in the specification)

摘要翻译： 通过使用包含以下结构单元（1a），（1b）和（1c）作为感光性树脂和磺酰胺化合物或特定二醇醚乙酸酯作为稳定剂的聚酰胺酸酯，特别优选粘度 可以获得稳定性，并且通过使用上述感光性树脂和特定的显影剂，可以形成高分辨率的浮雕图案。 （1a）在规范中定义的（1b）

公开(公告)号：US4417130A

公开(公告)日：1983-11-22

申请号：US326993

申请日：1981-12-03

申请人： Toshio Banba ,  Masanori Mizuno ,  Takaii Mizuno

发明人： Toshio Banba ,  Masanori Mizuno ,  Takaii Mizuno

IPC分类号： B23K9/09

CPC分类号： B23K9/091

摘要： The inductive elements in the background and pulse current portions of a pulse welding circuit are wound around separate cores and the background current path is connected in series with the pulse current inductive element to prevent damage to the background current switching element due to reverse voltage or current.

摘要翻译： 脉冲焊接电路的背景和脉冲电流部分中的感应元件缠绕在分离的芯上，并且背景电流路径与脉冲电流感应元件串联连接，以防止由于反向电压或电流而损坏背景电流开关元件 。

公开(公告)号：US08198006B2

公开(公告)日：2012-06-12

申请号：US12602156

申请日：2008-06-17

申请人： Toshio Banba

发明人： Toshio Banba

IPC分类号： G03F7/00 ,  G03F7/004 ,  G03F7/40

CPC分类号： H01L23/3171 ,  C08G73/22 ,  C08L79/04 ,  C09D179/04 ,  G03F7/0007 ,  G03F7/0233 ,  H01L21/02118 ,  H01L21/02282 ,  H01L21/312 ,  H01L23/293 ,  H01L23/3114 ,  H01L2924/0002 ,  H01L2924/00

摘要： A process for producing a semiconductor device includes a circuit formation step of forming circuit wiring on a semiconductor wafer using a chemically-amplified resist, and a cured film formation step of forming a cured film that protects the circuit wiring after forming the circuit wiring, the cured film being formed of a cured material of a photosensitive resin composition that comprises an alkali-soluble resin having a polybenzoxazole structure or a polybenzoxazole precursor structure, a compound that generates an acid upon exposure to light, and a solvent. The photosensitive resin composition substantially does not contain N-methyl-2-pyrrolidone. The process can suppress a T-top phenomenon or the like that may occur when forming a circuit on a semiconductor wafer using a chemically-amplified resist in the production of semiconductor devices.

摘要翻译： 一种半导体器件的制造方法，包括使用化学放大型抗蚀剂在半导体晶片上形成电路布线的电路形成工序，以及在形成电路布线后形成保护电路布线的固化膜的固化膜形成步骤， 固化膜由包含具有聚苯并恶唑结构或聚苯并恶唑前体结构的碱溶性树脂，曝光时产生酸的化合物和溶剂的感光性树脂组合物的固化物形成。 感光性树脂组合物基本上不含有N-甲基-2-吡咯烷酮。 该方法可以抑制在制造半导体器件时使用化学放大抗蚀剂在半导体晶片上形成电路时可能发生的T顶现象等。

公开(公告)号：US20120100484A1

公开(公告)日：2012-04-26

申请号：US13321180

申请日：2009-05-20

申请人： Takashi Hirano ,  Toshio Banba ,  Shusaku Okamyo ,  Hiroaki Makabe

发明人： Takashi Hirano ,  Toshio Banba ,  Shusaku Okamyo ,  Hiroaki Makabe

IPC分类号： G03F7/027

CPC分类号： G03F7/0233 ,  G03F7/0226

摘要： A positive photosensitive resin composition includes (A) a polybenzoxazole precursor resin, (B) a photosensitive diazoquinone compound, (C) a hindered phenol antioxidant shown by the following general formula (1), and (D) a phenol compound shown by the following general formula (2). Formula (1) is: wherein R1 represents a hydrogen atom or an organic group having 1 to 4 carbon atoms, a is an integer from 1 to 3, and b is an integer from 1 to 3. Formula (2) is: wherein R2 represents a methylene group or a single bond, c is an integer from 1 to 3, and d is an integer from 1 to 3. A protective film, an interlayer insulating film, and a semiconductor device and a display element using the same are also disclosed.

摘要翻译： 正型感光性树脂组合物包含（A）聚苯并恶唑前体树脂，（B）感光性重氮醌化合物，（C）下述通式（1）所示的受阻酚抗氧化剂，（D）下述通式 通式（2）。 式（1）为：式中，R 1表示氢原子或碳原子数1〜4的有机基团，a为1〜3的整数，b为1〜3的整数。式（2） 表示亚甲基或单键，c为1〜3的整数，d为1〜3的整数。保护膜，层间绝缘膜及半导体装置以及使用该键的显示元件也是 披露

公开(公告)号：US20100193971A1

公开(公告)日：2010-08-05

申请号：US12670505

申请日：2008-07-22

申请人： Toshio Banba ,  Hideki Orihara

发明人： Toshio Banba ,  Hideki Orihara

IPC分类号： H01L23/28 ,  G03F7/004 ,  G03F7/20

CPC分类号： H01L21/02282 ,  G03F7/0233 ,  G03F7/16 ,  H01L21/02118 ,  H01L21/0212 ,  H01L21/02126 ,  H01L21/3121 ,  H01L21/3122 ,  H01L21/3127

摘要： A positive photosensitive resin composition for spray coating of the present invention is used for forming a coating film onto a substrate such as a semiconductor element mounting substrate, a ceramics substrate or an aluminium substrate by spray coating. The positive photosensitive resin composition is characterized by containing (A) an alkali soluble resin, (B) a compound which generates an acid by the action of light and (C) a solvent, and having a viscosity of 2 to 200 cP.

摘要翻译： 本发明的用于喷涂的正型感光性树脂组合物用于通过喷涂在诸如半导体元件安装基板，陶瓷基板或铝基板的基板上形成涂膜。 正型感光性树脂组合物的特征在于含有（A）碱溶性树脂，（B）通过光的作用产生酸的化合物和（C）溶剂，粘度为2〜200cP。

公开(公告)号：US20100183985A1

公开(公告)日：2010-07-22

申请号：US12602156

申请日：2008-06-17

申请人： Toshio Banba

发明人： Toshio Banba

IPC分类号： G03F7/20

CPC分类号： H01L23/3171 ,  C08G73/22 ,  C08L79/04 ,  C09D179/04 ,  G03F7/0007 ,  G03F7/0233 ,  H01L21/02118 ,  H01L21/02282 ,  H01L21/312 ,  H01L23/293 ,  H01L23/3114 ,  H01L2924/0002 ,  H01L2924/00

摘要： A process for producing a semiconductor device includes a circuit formation step of forming circuit wiring on a semiconductor wafer using a chemically-amplified resist, and a cured film formation step of forming a cured film that protects the circuit wiring after forming the circuit wiring, the cured film being formed of a cured material of a photosensitive resin composition that comprises an alkali-soluble resin having a polybenzoxazole structure or a polybenzoxazole precursor structure, a compound that generates an acid upon exposure to light, and a solvent. The photosensitive resin composition substantially does not contain N-methyl-2-pyrrolidone. The process can suppress a T-top phenomenon or the like that may occur when forming a circuit on a semiconductor wafer using a chemically-amplified resist in the production of semiconductor devices.

摘要翻译： 一种半导体器件的制造方法，包括使用化学放大型抗蚀剂在半导体晶片上形成电路布线的电路形成工序，以及在形成电路布线后形成保护电路布线的固化膜的固化膜形成步骤， 固化膜由包含具有聚苯并恶唑结构或聚苯并恶唑前体结构的碱溶性树脂，曝光时产生酸的化合物和溶剂的感光性树脂组合物的固化物形成。 感光性树脂组合物基本上不含有N-甲基-2-吡咯烷酮。 该方法可以抑制在制造半导体器件时使用化学放大抗蚀剂在半导体晶片上形成电路时可能发生的T顶现象等。

公开(公告)号：US07678514B2

公开(公告)日：2010-03-16

申请号：US12343983

申请日：2008-12-24

申请人： Hiromichi Sugiyama ,  Toshio Banba ,  Shusaku Okamyo

发明人： Hiromichi Sugiyama ,  Toshio Banba ,  Shusaku Okamyo

IPC分类号： G03F7/023 ,  G03F7/30

CPC分类号： G03F7/0751 ,  C08G73/1025 ,  G03F7/0046 ,  G03F7/0233

摘要： A positive-type photosensitive resin composition that exhibits excellent adhesion to a substrate after a humidification treatment includes (A) an alkali-soluble resin, (B) a photosensitive diazoquinone compound, and (C-1) a silicon compound shown by the following formula (1), wherein R1 and R2 represent alkyl groups having 1 to 10 carbon atoms, R3 represents an organic group, and R4 represents an alkylene group having 1 to 10 carbon atoms, and i represents an integer from 0 to 2.

摘要翻译： 在加湿处理后表现出对基材的优异粘合性的正型感光性树脂组合物包括（A）碱溶性树脂，（B）光敏性重氮醌化合物和（C-1）下式所示的硅化合物 （1）中，R 1和R 2表示碳原子数1〜10的烷基，R 3表示有机基团，R 4表示碳原子数1〜10的亚烷基，i表示0〜2的整数。

公开(公告)号：US20090170026A1

公开(公告)日：2009-07-02

申请号：US12343983

申请日：2008-12-24

申请人： Hiromichi SUGIYAMA ,  Toshio Banba ,  Shusaku Okamyo

发明人： Hiromichi SUGIYAMA ,  Toshio Banba ,  Shusaku Okamyo

IPC分类号： G03F7/004

CPC分类号： G03F7/0751 ,  C08G73/1025 ,  G03F7/0046 ,  G03F7/0233

摘要： A positive-type photosensitive resin composition that exhibits excellent adhesion to a substrate after a humidification treatment includes (A) an alkali-soluble resin, (B) a photosensitive diazoquinone compound, and (C-1) a silicon compound shown by the following formula (1), wherein R1 and R2 represent alkyl groups having 1 to 10 carbon atoms, R3 represents an organic group, and R4 represents an alkylene group having 1 to 10 carbon atoms, and i represents an integer from 0 to 2.

摘要翻译： 在加湿处理后表现出对基材的优异粘合性的正型感光性树脂组合物包括（A）碱溶性树脂，（B）光敏性重氮醌化合物和（C-1）下式所示的硅化合物 （1）中，R 1和R 2表示碳原子数1〜10的烷基，R 3表示有机基团，R 4表示碳原子数1〜10的亚烷基，i表示0〜2的整数。