发明申请
- 专利标题: LOW-REFRACTIVE-INDEX FILM, METHOD OF DEPOSITING THE SAME, AND ANTIREFLECTION FILM
- 专利标题(中): 低折射率薄膜,其沉积方法和抗反射膜
-
申请号: US12666453申请日: 2008-05-20
-
公开(公告)号: US20100186630A1公开(公告)日: 2010-07-29
- 发明人: Mikihiro Taketomo , Toshitaka Kawashima , Yoshihiro Oshima
- 申请人: Mikihiro Taketomo , Toshitaka Kawashima , Yoshihiro Oshima
- 申请人地址: JP Tokyo
- 专利权人: SONY CORPORATION
- 当前专利权人: SONY CORPORATION
- 当前专利权人地址: JP Tokyo
- 优先权: JP2007-170584 20070628
- 国际申请: PCT/JP2008/059189 WO 20080520
- 主分类号: C09D1/00
- IPC分类号: C09D1/00 ; C23C14/38
摘要:
Provided is a method of depositing a low-refractive-index film, by which a thin film having uniform composition distribution in the film and having a low refractive index can be formed, a low-refractive-index film deposited by the method of depositing a low-refractive-index film, and furthermore, an antireflection film including the low-refractive-index film. In a method of depositing a low-refractive-index film including depositing a low-refractive-index film composed of MgF2—SiO2 on a substrate 11 by a reactive sputtering method, sputtering deposition is conducted using targets 4A and 4B composed of a sintered body of MgF2—SiO2 by applying an alternating voltage with a frequency in the range of 20 to 90 kHz between the substrate 11 and the targets 4A and 4B in an atmosphere of a mixed gas of an inert gas O2.
信息查询
IPC分类: