摘要:
A color converting member is capable of suppressing deterioration in a phosphor by a simple manufacturing process. A method of manufacturing a color converting member includes a process of molding a resin material into a shape. In the process, molding the resin material and the phosphor integrally into a shape is performed, after kneading a phosphor that converts one color light to another color light into the resin material.
摘要:
Disclosed herein is a method of manufacturing a thin film transistor having a structure that a gate electrode and an oxide semiconductor layer are disposed with a gate insulating film interposed between the gate electrode and the oxide semiconductor layer, and a source/drain electrode is electrically connected to the oxide semiconductor layer, the method including: continuously depositing an aluminum oxide (Al2O3) layer as a protective film and an aluminum (Al) layer in this order on any of the source/drain electrode, the gate insulating film, and the oxide semiconductor layer by using sputtering.
摘要翻译:这里公开了一种制造薄膜晶体管的方法,该薄膜晶体管的结构是栅极电极和氧化物半导体层被设置在栅电极和氧化物半导体层之间的栅绝缘膜上,并且源/漏电极电连接 涉及氧化物半导体层的方法,该方法包括:在源极/漏极,栅极绝缘膜和氧化物中的任何一个上依次沉积作为保护膜的氧化铝(Al 2 O 3)层和铝(Al)层 半导体层。
摘要:
A phosphor sheet having a laminated structure including a first barrier material, a first barrier material, a first color conversion layer, a second color conversion layer, and a second barrier layer and a display unit and an illuminating device including display unit is provided. A diffusion plate and a display unit including a diffusion plate are also provided.
摘要:
A composite optical element is provided. The composite optical element includes a plurality of optical elements, in which at least one of the optical elements is formed of an element modifying an optical path and the other optical elements are bonded to an incident surface and/or exit surface of the element modifying the optical path with a low refractive index material layer in between.
摘要:
A thin film transistor is provided. The thin film transistor includes an oxide semiconductor layer including a source region, a drain region, and a channel region wherein a portion of the source and drain regions has an oxygen concentration less than the channel region. Further provided is a thin film transistor that includes an oxide semiconductor layer including a source region, a drain region, and a channel region, wherein a portion of the source and drain regions includes a dopant selected from the group consisting of aluminum, boron, gallium, indium, titanium, silicon, germanium, tin, lead, and combinations thereof.
摘要:
An image pickup apparatus includes a light-beam splitting mirror configured to transmit and reflect incident light that has entered the light-beam splitting mirror through a photographing optical system; an image sensor that receives light transmitted through the light-beam splitting mirror; an autofocus detecting unit that receives light reflected by the light-beam splitting mirror; a signal processing unit configured to process an image pickup signal of the image sensor; and a display unit configured to display an image being photographed, on the basis of an image signal obtained at the signal processing unit. In the image pickup apparatus, the light-beam splitting mirror has spectral characteristics including a reflectivity of 25% or more and 35% or less at a wavelength of 400 to 650 nm and a reflectivity of 60% or more at a wavelength of about 700 nm through optimization.
摘要:
Provided is a method of depositing a low-refractive-index film, by which a thin film having uniform composition distribution in the film and having a low refractive index can be formed, a low-refractive-index film deposited by the method of depositing a low-refractive-index film, and furthermore, an antireflection film including the low-refractive-index film. In a method of depositing a low-refractive-index film including depositing a low-refractive-index film composed of MgF2—SiO2 on a substrate 11 by a reactive sputtering method, sputtering deposition is conducted using targets 4A and 4B composed of a sintered body of MgF2—SiO2 by applying an alternating voltage with a frequency in the range of 20 to 90 kHz between the substrate 11 and the targets 4A and 4B in an atmosphere of a mixed gas of an inert gas O2.
摘要:
A composite optical element is provided. The composite optical element includes a plurality of optical elements, in which at least one of the optical elements is formed of an element modifying an optical path and the other optical elements are bonded to an incident surface and/or exit surface of the element modifying the optical path with a low refractive index material layer in between.
摘要:
A reflective screen is provided. A reflective screen that displays an image by reflecting light from a light source includes a reflective sheet, a light-scattering sheet, and an adhesive layer bonding the reflective sheet to the light-scattering sheet. The adhesive layer contains a coloring material that absorbs light in a particular wavelength region.
摘要:
An optical device includes: an optical device body; a first transparent electrode film deposited on a light incident side; a second transparent electrode film so formed that the first and second transparent electrode films face away from each other; and a first ferroelectric film deposited at least between the first and second transparent electrode films, wherein the first ferroelectric film vibrates in response to a drive voltage applied through the first and second transparent electrode films.