发明申请
US20100187555A1 (Al,Ga,In)N AND ZnO DIRECT WAFER BONDED STRUCTURE FOR OPTOELECTRONIC APPLICATIONS, AND ITS FABRICATION METHOD
失效
（Al，Ga，In）N和ZnO直接用于光电子应用的结合结构及其制造方法
- 专利标题： (Al,Ga,In)N AND ZnO DIRECT WAFER BONDED STRUCTURE FOR OPTOELECTRONIC APPLICATIONS, AND ITS FABRICATION METHOD
- 专利标题（中）： （Al，Ga，In）N和ZnO直接用于光电子应用的结合结构及其制造方法
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申请号： US12752977申请日： 2010-04-01
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公开(公告)号： US20100187555A1公开(公告)日： 2010-07-29
- 发明人: Akihiko Murai , Christina Ye Chen , Daniel B. Thompson , Lee S. McCarthy , Steven P. DenBaars , Shuji Nakamura , Umesh K. Mishra
- 申请人： Akihiko Murai , Christina Ye Chen , Daniel B. Thompson , Lee S. McCarthy , Steven P. DenBaars , Shuji Nakamura , Umesh K. Mishra
- 申请人地址： US CA Oakland JP Saitama Prefecture
- 专利权人： THE REGENTS OF THE UNIVERSITY OF CALIFORNIA,JAPAN SCIENCE AND TECHNOLOGY AGENCY
- 当前专利权人： THE REGENTS OF THE UNIVERSITY OF CALIFORNIA,JAPAN SCIENCE AND TECHNOLOGY AGENCY
- 当前专利权人地址： US CA Oakland JP Saitama Prefecture
- 主分类号： H01L33/00
- IPC分类号： H01L33/00
摘要：
An (Al, Ga, In)N and ZnO direct wafer bonded light emitting diode (LED), wherein light passes through electrically conductive ZnO. Flat and clean surfaces are prepared for both the (Al, Ga, In)N and ZnO wafers. A wafer bonding process is then performed between the (Al, Ga, In)N and ZnO wafers, wherein the (Al, Ga, In)N and ZnO wafers are joined together and then wafer bonded in a nitrogen ambient under uniaxial pressure at a set temperature for a set duration. After the wafer bonding process, ZnO is shaped for increasing light extraction from inside of LED.
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