发明申请
- 专利标题: Integrated Circuit Capacitors Having Composite Dielectric Layers Therein Containing Crystallization Inhibiting Regions and Methods of Forming Same
- 专利标题(中): 具有复合介质层的集成电路电容器,其中包含结晶抑制区域和形成方法
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申请号: US12754713申请日: 2010-04-06
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公开(公告)号: US20100187655A1公开(公告)日: 2010-07-29
- 发明人: Jae-hyoung Choi , Jung-hee Chung , Cha-young Yoo , Young-sun Kim , Se-hoon Oh
- 申请人: Jae-hyoung Choi , Jung-hee Chung , Cha-young Yoo , Young-sun Kim , Se-hoon Oh
- 优先权: KR2004-67433 20040826
- 主分类号: H01L29/92
- IPC分类号: H01L29/92
摘要:
Integrated circuit capacitors have composite dielectric layers therein. These composite dielectric layers include crystallization inhibiting regions that operate to increase the overall crystallization temperature of the composite dielectric layer. An integrated circuit capacitor includes first and second capacitor electrodes and a capacitor dielectric layer extending between the first and second capacitor electrodes. The capacitor dielectric layer includes a composite of a first dielectric layer extending adjacent the first capacitor electrode, a second dielectric layer extending adjacent the second capacitor electrode and an electrically insulating crystallization inhibiting layer extending between the first and second dielectric layers. The electrically insulating crystallization inhibiting layer is formed of a material having a higher crystallization temperature characteristic relative to the first and second dielectric layers.
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