Invention Application
- Patent Title: High Performance Chirped Electrode Design for Large Area Optoelectronic Devices
- Patent Title (中): 高性能啁啾电极设计大面积光电子器件
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Application No.: US12753952Application Date: 2010-04-05
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Publication No.: US20100188725A1Publication Date: 2010-07-29
- Inventor: Peter G. Goetz , William S. Rabinovich
- Applicant: Peter G. Goetz , William S. Rabinovich
- Applicant Address: US DC Washington
- Assignee: The Government of the US, as represented by the Secretary of the Navy
- Current Assignee: The Government of the US, as represented by the Secretary of the Navy
- Current Assignee Address: US DC Washington
- Main IPC: G02F1/015
- IPC: G02F1/015 ; H01L31/0352

Abstract:
An electro-optic device with a doped semiconductor base and a plurality of pixels on the semiconductor base. Pixels include oppositely doped semiconductor layer and a top electrode formed on the oppositely doped semiconductor layer. The top electrode has a grid pattern with at least one busbar and a plurality of fingers extending from the busbar, and spacing between the fingers decreases with distance from the bondpad along the busbar. Each pixel can also include a multiple quantum well formed on the semiconductor base. The top electrode shape produces an approximately uniform lateral resistance in the pixel. An embodiment is a large area modulator for modulating retro-reflector systems, which typically use large area surface-normal modulators with large lateral current flow. Uniform resistance to each part of the modulator decreases location dependence of frequency response. A chirped grid electrode balances semiconductor sheet resistance and metal line resistance components of the series resistance.
Public/Granted literature
- US07852543B2 High performance chirped electrode design for large area optoelectronic devices Public/Granted day:2010-12-14
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