发明申请
- 专利标题: METHOD FOR MANUFACTURING MAGNETIC RECORDING MEDIUM, MAGNETIC RECORDING MEDIUM, AND MAGNETIC RECORDING AND REPRODUCING APPARATUS
- 专利标题(中): 用于制造磁记录介质,磁记录介质和磁记录和再现装置的方法
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申请号: US12692354申请日: 2010-01-22
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公开(公告)号: US20100188772A1公开(公告)日: 2010-07-29
- 发明人: Shingo Sasaki , Shin Saito , Migaku Takahashi , Atsushi Hashimoto , Yuzo Sasaki , Gohei Kurokawa , Tomoyuki Maeda , Akihiko Takeo
- 申请人: Shingo Sasaki , Shin Saito , Migaku Takahashi , Atsushi Hashimoto , Yuzo Sasaki , Gohei Kurokawa , Tomoyuki Maeda , Akihiko Takeo
- 申请人地址: JP Tokyo JP Tokyo JP Sendai-shi
- 专利权人: SHOWA DENKO K.K.,KABUSHIKI KAISHA TOSHIBA,TOHOKU UNIVERSITY
- 当前专利权人: SHOWA DENKO K.K.,KABUSHIKI KAISHA TOSHIBA,TOHOKU UNIVERSITY
- 当前专利权人地址: JP Tokyo JP Tokyo JP Sendai-shi
- 优先权: JP2009-015635 20090127
- 主分类号: G11B21/02
- IPC分类号: G11B21/02 ; C23C14/34 ; G11B5/66
摘要:
There are provided a method for manufacturing a magnetic recording medium which is excellent in terms of both the recording and reproduction characteristics and the thermal fluctuation characteristics without reducing the density and hardness of the perpendicular magnetic layer; a magnetic recording medium; and a magnetic recording and reproducing apparatus with which an excellent recording density is achieved,wherein, in the method for manufacturing the magnetic recording medium,at least a portion of the perpendicular magnetic layer 4 is formed as a magnetic layer having a granular structure that contains Co as a major component and also contains an oxide of at least one nonmagnetic metal selected from the group consisting of Cr, Si, Ta, Al, Ti, W and Mg;a target for forming the perpendicular magnetic layer 4 by the sputtering process is prepared so as to include an oxide of Co and a compound of Co and at least one nonmagnetic metal selected from the group consisting of Cr, Si, Ta, Al, Ti, W and Mg, and to make the proportion of oxygen contained in the target higher than the proportion of oxygen contained in the perpendicular magnetic layer 4; anda sputtering gas pressure at the time of forming the perpendicular magnetic layer is set to 1 Pa or less.
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