发明申请
- 专利标题： MEMORY DEVICE AND OPERATION METHOD THEREOF
- 专利标题（中）： 存储器件及其操作方法
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申请号： US12358900申请日： 2009-01-23
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公开(公告)号： US20100192039A1公开(公告)日： 2010-07-29
- 发明人: Wen-Chiao Ho , Chin-Hung Chang , Shuo-Nan Hung , Chun-Hsiung Hung
- 申请人： Wen-Chiao Ho , Chin-Hung Chang , Shuo-Nan Hung , Chun-Hsiung Hung
- 申请人地址： TW Hsinchu
- 专利权人： MACRONIX INTERNATIONAL CO., LTD.
- 当前专利权人： MACRONIX INTERNATIONAL CO., LTD.
- 当前专利权人地址： TW Hsinchu
- 主分类号： H03M13/29
- IPC分类号： H03M13/29 ; G06F11/10
摘要：
A method for operating a memory device is provided and includes the following steps. A first error correction code is generated according to user data. Then, the user data is written to the memory device. Moreover, the user data in the memory device is read, and a second error correction code is generated according to the read user data. Further, the first and the second error correction codes are written to the memory device.
公开/授权文献
- US08924819B2 Memory device and operation method thereof 公开/授权日：2014-12-30
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